Carrier capture processes in strain-induced InxGa1-xAs/GaAs quantum dot structures

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Lingk, C.
dc.contributor.author Helfer, W.
dc.contributor.author von Plessen, G.
dc.contributor.author Feldmann, J.
dc.contributor.author Stock, K.
dc.contributor.author Feise, M. W.
dc.contributor.author Citrin, D. S.
dc.contributor.author Lipsanen, Harri
dc.contributor.author Sopanen, Markku
dc.contributor.author Virkkala, R.
dc.contributor.author Tulkki, J.
dc.contributor.author Ahopelto, J.
dc.date.accessioned 2015-05-15T09:00:52Z
dc.date.available 2015-05-15T09:00:52Z
dc.date.issued 2000
dc.identifier.citation Lingk, C. & Helfer, W. & von Plessen, G. & Feldmann, J. & Stock, K. & Feise, M. W. & Citrin, D. S. & Lipsanen, Harri & Sopanen, M. & Virkkala, R. & Tulkki, J. & Ahopelto, J.. 2000. Carrier capture processes in strain-induced InxGa1-xAs/GaAs quantum dot structures. Physical Review B. Volume 62, Issue 20. P. 13588-13594. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.62.13588. en
dc.identifier.issn 1098-0121 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/16045
dc.description.abstract We investigate carrier capture processes in strain-induced quantum dot structures. The quantum dots consist of a near-surface InGaAs/GaAs quantum well in which a lateral confining potential is generated by the strain from InP stressor islands grown on the sample surface. Using photoluminescence spectroscopy, we show that the rate of carrier capture into the quantum dots increases dramatically when the energetic depth of the confinement potential is reduced by enlarging the quantum well/surface separation D. While carriers in the quantum well region between the quantum dots are found to experience D-dependent nonradiative surface recombination, this process seems to be negligible for carriers in the quantum dots, presumably due to the protecting InP islands. en
dc.format.extent 13588-13594
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Physical Society (APS) en
dc.relation.ispartofseries Physical Review B en
dc.relation.ispartofseries Volume 62, Issue 20
dc.rights © 2000 American Physical Society (APS). http://www.aps.org/ en
dc.subject.other Physics en
dc.title Carrier capture processes in strain-induced InxGa1-xAs/GaAs quantum dot structures en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Physical Society (APS)
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Department of Micro and Nanosciences en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.subject.keyword carrier capture processes en
dc.subject.keyword quantum dots en
dc.subject.keyword quantum wells en
dc.subject.keyword photoluminescence spectroscopy en
dc.identifier.urn URN:NBN:fi:aalto-201505152695
dc.type.dcmitype text en
dc.identifier.doi 10.1103/physrevb.62.13588
dc.type.version Final published version en


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