In situ determination of nitrogen content in InGaAsN quantum wells

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Reentilä, O.
dc.contributor.author Mattila, M.
dc.contributor.author Knuuttila, L.
dc.contributor.author Hakkarainen, T.
dc.contributor.author Sopanen, Markku
dc.contributor.author Lipsanen, Harri
dc.date.accessioned 2015-05-07T09:00:49Z
dc.date.available 2015-05-07T09:00:49Z
dc.date.issued 2006
dc.identifier.citation Reentilä, O. & Mattila, M. & Knuuttila, L. & Hakkarainen, T. & Sopanen, M. & Lipsanen, Harri. 2006. In situ determination of nitrogen content in InGaAsN quantum wells. Journal of Applied Physics. Volume 100, Issue 1. P. 013509/1-4. ISSN 0021-8979 (printed). DOI: 10.1063/1.2209772. en
dc.identifier.issn 0021-8979 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/15913
dc.description.abstract The growth of InGaAsN/GaAs multiple quantum well structures by metal-organic vapor phase epitaxy is monitored by in situ reflectometry. The nitrogen incorporation is found to depend superlinearly on the precursor flow and a threshold value for the flow is observed. By in situmeasurements of the InGaAsN quantum well samples with a fixed indium content, the change in the reflectance during the quantum wellgrowth is found to be linearly dependent on the quantum well nitrogen content. A model to determine the nitrogen content already during the growth is developed. Moreover, the field of application of in situ reflectance monitoring is extended from thick layers to thin layers, including quantum wells. en
dc.format.extent 013509/1-4
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Journal of Applied Physics en
dc.relation.ispartofseries Volume 100, Issue 1
dc.rights © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap en
dc.subject.other Physics en
dc.title In situ determination of nitrogen content in InGaAsN quantum wells en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Institute of Physics
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Department of Micro and Nanosciences en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.subject.keyword quantum wells en
dc.subject.keyword indium en
dc.subject.keyword semiconductor growth en
dc.subject.keyword metalorganic vapor phase epitaxy en
dc.subject.keyword III-V semiconductors en
dc.identifier.urn URN:NBN:fi:aalto-201505062557
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.2209772
dc.type.version Final published version en


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