Yield and leakage currents of large area lattice matched InP/InGaAs heterostructures

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Olsson, Anders
dc.contributor.author Aierken, Abuduwayiti
dc.contributor.author Jussila, Henri
dc.contributor.author Bauer, Jan
dc.contributor.author Oksanen, Jani
dc.contributor.author Breitenstein, Otwin
dc.contributor.author Lipsanen, Harri
dc.contributor.author Tulkki, Jukka
dc.date.accessioned 2015-05-07T09:00:45Z
dc.date.available 2015-05-07T09:00:45Z
dc.date.issued 2014
dc.identifier.citation Olsson, Anders & Aierken, Abuduwayiti & Jussila, Henri & Bauer, Jan & Oksanen, Jani & Breitenstein, Otwin & Lipsanen, Harri & Tulkki, Jukka. 2014. Yield and leakage currents of large area lattice matched InP/InGaAs heterostructures. Journal of Applied Physics. Volume 116, Issue 8. P. 083105/1-6. ISSN 0021-8979 (printed). DOI: 10.1063/1.4894005. en
dc.identifier.issn 0021-8979 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/15912
dc.description.abstract Demonstrating and harnessing electroluminescent cooling at technologically viable cooling powers requires the ability to routinely fabricate large area high quality light-emitting diodes (LEDs). Detailed information on the performance and yield of relevant large area devices is not available, however. Here, we report extensive information on the yield and related large area scaling of InP/InGaAs LEDs and discuss the origin of the failure mechanisms based on lock-in thermographic imaging. The studied LEDs were fabricated as mesa structures of various sizes on epistructures grown at five different facilities specialized in the growth of III-V compound semiconductors. While the smaller mesas generally showed relatively good electrical characteristics and low leakage current densities, some of them also exhibited unusually large leakage current densities. The provided information is critical for the development and design of the optical cooling technologies relying on large area devices. en
dc.format.extent 083105/1-6
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Journal of Applied Physics en
dc.relation.ispartofseries Volume 116, Issue 8
dc.rights © 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap en
dc.subject.other Physics en
dc.title Yield and leakage currents of large area lattice matched InP/InGaAs heterostructures en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Institute of Physics
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.contributor.department Department of Micro and Nanosciences en
dc.subject.keyword leakage currents en
dc.subject.keyword light emitting diodes en
dc.subject.keyword III-V semiconductors en
dc.subject.keyword current density en
dc.subject.keyword electroluminescence en
dc.identifier.urn URN:NBN:fi:aalto-201505052548
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.4894005
dc.type.version Final published version en

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