Strain-induced quantum dots by self-organized stressors

Loading...
Thumbnail Image
Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
1995
Major/Subject
Mcode
Degree programme
Language
en
Pages
2364-2366
Series
Applied Physics Letters, Volume 66, Issue 18
Abstract
Novel in situ method to produce quantum dots is reported. Three‐dimensional confinement of carriers to a GaInAs/GaAs quantum welldots is observed by photoluminescence. The confinement potential is induced by stressors, formed by self‐organizing growth of InP nanoscale islands on top barrier GaAssurface. Two transitions arising from the strain‐induced quantum dots produced by two types of InP islands are identified. The luminescence from higher electronic states of the quantum dots having a level splitting of 8 meV is also observed.
Description
Keywords
quantum dots, III‐V semiconductors, level splitting, luminescence, photoluminescence
Other note
Citation
Sopanen, M. & Lipsanen, Harri & Ahopelto, J. 1995. Strain-induced quantum dots by self-organized stressors. Applied Physics Letters. Volume 66, Issue 18. P. 2364-2366. ISSN 0003-6951 (printed). DOI: 10.1063/1.113984.