Strain-induced quantum dots by self-organized stressors

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Sopanen, Markku
dc.contributor.author Lipsanen, Harri
dc.contributor.author Ahopelto, J.
dc.date.accessioned 2015-05-07T09:00:40Z
dc.date.available 2015-05-07T09:00:40Z
dc.date.issued 1995
dc.identifier.citation Sopanen, M. & Lipsanen, Harri & Ahopelto, J. 1995. Strain-induced quantum dots by self-organized stressors. Applied Physics Letters. Volume 66, Issue 18. P. 2364-2366. ISSN 0003-6951 (printed). DOI: 10.1063/1.113984. en
dc.identifier.issn 0003-6951 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/15911
dc.description.abstract Novel in situ method to produce quantum dots is reported. Three‐dimensional confinement of carriers to a GaInAs/GaAs quantum welldots is observed by photoluminescence. The confinement potential is induced by stressors, formed by self‐organizing growth of InP nanoscale islands on top barrier GaAssurface. Two transitions arising from the strain‐induced quantum dots produced by two types of InP islands are identified. The luminescence from higher electronic states of the quantum dots having a level splitting of 8 meV is also observed. en
dc.format.extent 2364-2366
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Applied Physics Letters en
dc.relation.ispartofseries Volume 66, Issue 18
dc.rights © 1995 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap en
dc.subject.other Physics en
dc.title Strain-induced quantum dots by self-organized stressors en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Institute of Physics
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Department of Micro and Nanosciences en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.subject.keyword quantum dots en
dc.subject.keyword III‐V semiconductors en
dc.subject.keyword level splitting en
dc.subject.keyword luminescence en
dc.subject.keyword photoluminescence en
dc.identifier.urn URN:NBN:fi:aalto-201505052544
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.113984
dc.type.version Final published version en


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