Strain-induced quantum dots by self-organized stressors

Sopanen, Markku; Lipsanen, Harri; Ahopelto, J.

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Strain-induced quantum dots by self-organized stressors

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Title:	Strain-induced quantum dots by self-organized stressors
Author(s):	Sopanen, Markku ; Lipsanen, Harri ; Ahopelto, J.
Date:	1995
Language:	en
Pages:	2364-2366
Department:	Department of Micro and Nanosciences Mikro- ja nanotekniikan laitos
Series:	Applied Physics Letters, Volume 66, Issue 18
ISSN:	0003-6951 (printed)
DOI-number:	10.1063/1.113984
Subject:	Physics
Keywords:	quantum dots, III‐V semiconductors, level splitting, luminescence, photoluminescence
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Citation: Sopanen, M. & Lipsanen, Harri & Ahopelto, J. 1995. Strain-induced quantum dots by self-organized stressors. Applied Physics Letters. Volume 66, Issue 18. P. 2364-2366. ISSN 0003-6951 (printed). DOI: 10.1063/1.113984.
Abstract: Novel in situ method to produce quantum dots is reported. Three‐dimensional confinement of carriers to a GaInAs/GaAs quantum welldots is observed by photoluminescence. The confinement potential is induced by stressors, formed by self‐organizing growth of InP nanoscale islands on top barrier GaAssurface. Two transitions arising from the strain‐induced quantum dots produced by two types of InP islands are identified. The luminescence from higher electronic states of the quantum dots having a level splitting of 8 meV is also observed.
Rights: © 1995 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap
Permanent link to this item: http://urn.fi/URN:NBN:fi:aalto-201505052544 Email this Export to RefWorks QR Code Print BibTex Tweet

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