Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Jussila, H.
dc.contributor.author Nagarajan, S.
dc.contributor.author Huhtio, T.
dc.contributor.author Lipsanen, Harri
dc.contributor.author Tuomi, T. O.
dc.contributor.author Sopanen, Markku
dc.date.accessioned 2015-05-06T09:01:18Z
dc.date.available 2015-05-06T09:01:18Z
dc.date.issued 2012
dc.identifier.citation Jussila, H. & Nagarajan, S. & Huhtio, T. & Lipsanen, Harri & Tuomi, T. O. & Sopanen, M. 2012. Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis. Journal of Applied Physics. Volume 111, Issue 4. P. 043518/1-6. ISSN 0021-8979 (printed). DOI: 10.1063/1.3686711. en
dc.identifier.issn 0021-8979 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/15892
dc.description.abstract This paper examines the structural properties of gallium phosphide layers by high resolution x-ray diffraction and atomic force microscopy measurements. GaP layers are grown on misoriented and nominally exactly oriented silicon (001) substrates by metalorganic vapor phase epitaxy. Structural characterization is performed by reciprocal lattice map and transverse scan measurements of (00l)-reflections (l = 2, 4, 6). Transverse scan line profiles of GaP layers on exactly oriented and misoriented substrates are compared thoroughly and antiphase disorder related satellite peaks are observed on exactly oriented substrates. In addition, results imply that antiphase disorder is self-annihilated on misoriented substrates. The dependence of crystallographic tilt on growth temperature indicates structural coherence. Williamson-Hall-like plot of transverse scans reveals the lateral correlation length of crystalline defects of 79 nm which gives the average size of the mosaic crystallites. In addition, the mosaicity of the GaP layer is 0.042°. en
dc.format.extent 043518/1-6
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Journal of Applied Physics en
dc.relation.ispartofseries Volume 111, Issue 4
dc.rights © 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap en
dc.subject.other Physics en
dc.title Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Institute of Physics
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Department of Micro and Nanosciences en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.subject.keyword III–V semiconductors en
dc.subject.keyword silicon en
dc.subject.keyword crystal defects en
dc.subject.keyword satellites en
dc.subject.keyword dislocations en
dc.identifier.urn URN:NBN:fi:aalto-201505062554
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.3686711
dc.type.version Final published version en


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