Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Mattila, P.
dc.contributor.author Bosund, M.
dc.contributor.author Huhtio, T.
dc.contributor.author Lipsanen, Harri
dc.contributor.author Sopanen, Markku
dc.date.accessioned 2015-05-06T09:01:14Z
dc.date.available 2015-05-06T09:01:14Z
dc.date.issued 2012
dc.identifier.citation Mattila, P. & Bosund, M. & Huhtio, T. & Lipsanen, Harri & Sopanen, M. 2012. Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition. Journal of Applied Physics. Volume 111, Issue 6. P. 063511/1-4. ISSN 0021-8979 (printed). DOI: 10.1063/1.3694798. en
dc.identifier.issn 0021-8979 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/15891
dc.description.abstract Surface passivation of GaAs by ammonia plasma and AlN fabricated by plasma-enhanced atomic layer deposition are compared. It is shown that the deposition temperature can be reduced to 150 °C and effective passivation is still achieved. Samples passivated by AlN fabricated at 150 °C show four times higher photoluminescence intensity and longer time-resolved photoluminescence lifetime than ammonia plasma passivated samples. The passivation effect is shown to last for months. The dependence of charge carrier lifetime and integrated photoluminescence intensity on AlN layer thickness is studied using an exponential model to describe the tunneling probability from the near-surface quantum well to the GaAssurface. en
dc.format.extent 063511/1-4
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Journal of Applied Physics en
dc.relation.ispartofseries Volume 111, Issue 6
dc.rights © 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap en
dc.subject.other Physics en
dc.title Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Institute of Physics
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Department of Micro and Nanosciences en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.subject.keyword III-V semiconductors en
dc.subject.keyword atomic layer deposition en
dc.subject.keyword carrier lifetime en
dc.subject.keyword gallium arsenide en
dc.subject.keyword passivation en
dc.subject.keyword photoluminescence en
dc.subject.keyword plasma materials processing en
dc.subject.keyword semiconductor quantum wells en
dc.identifier.urn URN:NBN:fi:aalto-201505062553
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.3694798
dc.type.version Final published version en


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