Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Bouravleuv, Alexei
dc.contributor.author Cirlin, George
dc.contributor.author Sapega, Victor
dc.contributor.author Werner, Peter
dc.contributor.author Savin, Alexander
dc.contributor.author Lipsanen, Harri
dc.date.accessioned 2015-05-06T09:01:10Z
dc.date.available 2015-05-06T09:01:10Z
dc.date.issued 2013
dc.identifier.citation Bouravleuv, Alexei & Cirlin, George & Sapega, Victor & Werner, Peter & Savin, Alexander & Lipsanen, Harri. 2013. Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy. Journal of Applied Physics. Volume 113, Issue 14. P. 144303/1-6. ISSN 0021-8979 (printed). DOI: 10.1063/1.4799624. en
dc.identifier.issn 0021-8979 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/15890
dc.description.abstract (Ga,Mn)As nanowires were grown by molecular beam epitaxy using Mn as a growth catalyst on GaAs(001) substrates at 485 °C, i.e., at intermediate temperatures higher than ones used for the growth of (Ga,Mn)As thin films, but lower than the ordinary temperatures of Au-assisted growth of GaAs nanowires. (Ga,Mn)As nanowires obtained with typical lengths between 0.8 and 4 μm and diameters 50–90 nm do not have defects, such as dislocations or precipitates, except for the stacking faults lying parallel to the growth direction. The investigation of magnetic and optical properties has been carried out not only for as-grown samples with nanowires but also for peeled off nanowires from the host substrate. The results obtained demonstrate that (Ga,Mn)As nanowires exhibit ferromagnetic ordering around 70 K. en
dc.format.extent 144303/1-6
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Journal of Applied Physics en
dc.relation.ispartofseries Volume 113, Issue 14
dc.rights © 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap en
dc.subject.other Physics en
dc.title Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Institute of Physics
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.contributor.department Department of Micro and Nanosciences en
dc.subject.keyword thin film growth en
dc.subject.keyword molecular beam epitaxy en
dc.subject.keyword nanowires en
dc.subject.keyword Curie point en
dc.subject.keyword epitaxy en
dc.identifier.urn URN:NBN:fi:aalto-201505062552
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.4799624
dc.type.version Final published version en


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