Fabrication of GaInAs quantum disks using self-organized InP islands as a mask in wet chemical etching

 |  Login

Show simple item record

dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Sopanen, Markku
dc.contributor.author Lipsanen, Harri
dc.contributor.author Ahopelto, J.
dc.date.accessioned 2015-05-05T09:01:17Z
dc.date.available 2015-05-05T09:01:17Z
dc.date.issued 1996
dc.identifier.citation Sopanen, M. & Lipsanen, Harri & Ahopelto, J. 1996. Fabrication of GaInAs quantum disks using self-organized InP islands as a mask in wet chemical etching. Applied Physics Letters. Volume 69, Issue 26. P. 4029-4031. ISSN 0003-6951 (printed). DOI: 10.1063/1.117860. en
dc.identifier.issn 0003-6951 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/15877
dc.description.abstract GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near‐surface quantum well using self‐organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free‐standing GaInAs/GaAs columns, produced by a three‐step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well. en
dc.format.extent 4029-4031
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Applied Physics Letters en
dc.relation.ispartofseries Volume 69, Issue 26
dc.rights © 1996 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap en
dc.subject.other Physics en
dc.title Fabrication of GaInAs quantum disks using self-organized InP islands as a mask in wet chemical etching en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Institute of Physics
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Department of Micro and Nanosciences en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.subject.keyword etching en
dc.subject.keyword quantum wells en
dc.subject.keyword epitaxy en
dc.subject.keyword luminescence en
dc.subject.keyword metalorganic vapor phase epitaxy en
dc.identifier.urn URN:NBN:fi:aalto-201505052540
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.117860
dc.type.version Final published version en


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search archive


Advanced Search

article-iconSubmit a publication

Browse

My Account