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Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 µm

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Hakkarainen, T.
dc.contributor.author Toivonen, J.
dc.contributor.author Sopanen, Markku
dc.contributor.author Lipsanen, Harri
dc.date.accessioned 2015-05-05T09:00:57Z
dc.date.available 2015-05-05T09:00:57Z
dc.date.issued 2001
dc.identifier.citation Hakkarainen, T. & Toivonen, J. & Sopanen, M. & Lipsanen, Harri. 2001. Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 µm. Applied Physics Letters. Volume 79, Issue 24. P. 3932-3934. ISSN 0003-6951 (printed). DOI: 10.1063/1.1425082. en
dc.identifier.issn 0003-6951 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/15872
dc.description.abstract Self-assembled GaIn(N)As quantum dots are fabricated on GaAs by atmospheric pressuremetalorganic vapor-phase epitaxy using dimethylhydrazine (DMHy) precursor as a nitrogen source. The incorporation of nitrogen into the islands is observed to be negligible. However, the areal density of the islands is increased by up to one order of magnitude compared to that of the respective GaInAs islands. The GaIn(N)As island size can also be controlled by varying the DMHy flow. An enhancement of the room-temperature luminescence at 1.3 μm is observed in the GaIn(N)As samples grown with DMHy. en
dc.format.extent 3932-3934
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Applied Physics Letters en
dc.relation.ispartofseries Volume 79, Issue 24
dc.rights © 2001 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap en
dc.subject.other Physics en
dc.title Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 µm en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder AIP Publishing
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Department of Micro and Nanosciences en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.subject.keyword luminescence en
dc.subject.keyword quantum dots en
dc.subject.keyword self assembly en
dc.subject.keyword atmospheric pressure en
dc.subject.keyword metalorganic vapor phase epitaxy en
dc.identifier.urn URN:NBN:fi:aalto-201505042536
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.1425082
dc.type.version Final published version en

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