Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 µm

Hakkarainen, T.; Toivonen, J.; Sopanen, Markku; Lipsanen, Harri

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dc.contributor	Aalto-yliopisto	fi
dc.contributor	Aalto University	en
dc.contributor.author	Hakkarainen, T.
dc.contributor.author	Toivonen, J.
dc.contributor.author	Sopanen, Markku
dc.contributor.author	Lipsanen, Harri
dc.date.accessioned	2015-05-05T09:00:57Z
dc.date.available	2015-05-05T09:00:57Z
dc.date.issued	2001
dc.identifier.citation	Hakkarainen, T. & Toivonen, J. & Sopanen, M. & Lipsanen, Harri. 2001. Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 µm. Applied Physics Letters. Volume 79, Issue 24. P. 3932-3934. ISSN 0003-6951 (printed). DOI: 10.1063/1.1425082.	en
dc.identifier.issn	0003-6951 (printed)
dc.identifier.uri	https://aaltodoc.aalto.fi/handle/123456789/15872
dc.description.abstract	Self-assembled GaIn(N)As quantum dots are fabricated on GaAs by atmospheric pressuremetalorganic vapor-phase epitaxy using dimethylhydrazine (DMHy) precursor as a nitrogen source. The incorporation of nitrogen into the islands is observed to be negligible. However, the areal density of the islands is increased by up to one order of magnitude compared to that of the respective GaInAs islands. The GaIn(N)As island size can also be controlled by varying the DMHy flow. An enhancement of the room-temperature luminescence at 1.3 μm is observed in the GaIn(N)As samples grown with DMHy.	en
dc.format.extent	3932-3934
dc.format.mimetype	application/pdf	en
dc.language.iso	en	en
dc.publisher	AIP Publishing	en
dc.relation.ispartofseries	Applied Physics Letters	en
dc.relation.ispartofseries	Volume 79, Issue 24
dc.rights	© 2001 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap	en
dc.subject.other	Physics	en
dc.title	Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 µm	en
dc.type	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä	fi
dc.description.version	Peer reviewed	en
dc.rights.holder	AIP Publishing
dc.contributor.school	Sähkötekniikan korkeakoulu	fi
dc.contributor.school	School of Electrical Engineering	en
dc.contributor.department	Department of Micro and Nanosciences	en
dc.contributor.department	Mikro- ja nanotekniikan laitos	fi
dc.subject.keyword	luminescence	en
dc.subject.keyword	quantum dots	en
dc.subject.keyword	self assembly	en
dc.subject.keyword	atmospheric pressure	en
dc.subject.keyword	metalorganic vapor phase epitaxy	en
dc.identifier.urn	URN:NBN:fi:aalto-201505042536
dc.type.dcmitype	text	en
dc.identifier.doi	10.1063/1.1425082
dc.type.version	Final published version	en

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