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Observation of defect complexes containing Ga vacancies in GaAsN

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Toivonen, J.
dc.contributor.author Hakkarainen, T.
dc.contributor.author Sopanen, Markku
dc.contributor.author Lipsanen, Harri
dc.contributor.author Oila, J.
dc.contributor.author Saarinen, K.
dc.date.accessioned 2015-05-05T09:00:49Z
dc.date.available 2015-05-05T09:00:49Z
dc.date.issued 2003
dc.identifier.citation Toivonen, J. & Hakkarainen, T. & Sopanen, M. & Lipsanen, Harri & Oila, J. & Saarinen, K. 2003. Observation of defect complexes containing Ga vacancies in GaAsN. Applied Physics Letters. Volume 82, Issue 1. P. 40-42. ISSN 0003-6951 (printed). DOI: 10.1063/1.1533843. en
dc.identifier.issn 0003-6951 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/15870
dc.description.abstract Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found to contain Ga vacancies in defect complexes. The density of the vacancy complexes increases rapidly to the order of 1018 cm−3 with increasing N composition and decreases after annealing at 700 °C. The anticorrelation of the vacancy concentration and the integrated photoluminescence intensity suggests that the Ga vacancy complexes act as nonradiative recombination centers. en
dc.format.extent 40-42
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Applied Physics Letters en
dc.relation.ispartofseries Volume 82, Issue 1
dc.rights © 2003 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap en
dc.subject.other Physics en
dc.title Observation of defect complexes containing Ga vacancies in GaAsN en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder AIP Publishing
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Department of Micro and Nanosciences en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.subject.keyword vacancies en
dc.subject.keyword annealing en
dc.subject.keyword photoluminescence en
dc.subject.keyword positrons en
dc.subject.keyword compound semiconductors en
dc.subject.keyword metalorganic vapor phase epitaxy en
dc.subject.keyword dilute nitrides en
dc.subject.keyword positron spectroscopy en
dc.identifier.urn URN:NBN:fi:aalto-201505042535
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.1533843
dc.type.version Final published version en

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