Observation of defect complexes containing Ga vacancies in GaAsN

Toivonen, J.; Hakkarainen, T.; Sopanen, Markku; Lipsanen, Harri; Oila, J.; Saarinen, K.

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dc.contributor	Aalto-yliopisto	fi
dc.contributor	Aalto University	en
dc.contributor.author	Toivonen, J.
dc.contributor.author	Hakkarainen, T.
dc.contributor.author	Sopanen, Markku
dc.contributor.author	Lipsanen, Harri
dc.contributor.author	Oila, J.
dc.contributor.author	Saarinen, K.
dc.date.accessioned	2015-05-05T09:00:49Z
dc.date.available	2015-05-05T09:00:49Z
dc.date.issued	2003
dc.identifier.citation	Toivonen, J. & Hakkarainen, T. & Sopanen, M. & Lipsanen, Harri & Oila, J. & Saarinen, K. 2003. Observation of defect complexes containing Ga vacancies in GaAsN. Applied Physics Letters. Volume 82, Issue 1. P. 40-42. ISSN 0003-6951 (printed). DOI: 10.1063/1.1533843.	en
dc.identifier.issn	0003-6951 (printed)
dc.identifier.uri	https://aaltodoc.aalto.fi/handle/123456789/15870
dc.description.abstract	Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found to contain Ga vacancies in defect complexes. The density of the vacancy complexes increases rapidly to the order of 1018 cm−3 with increasing N composition and decreases after annealing at 700 °C. The anticorrelation of the vacancy concentration and the integrated photoluminescence intensity suggests that the Ga vacancy complexes act as nonradiative recombination centers.	en
dc.format.extent	40-42
dc.format.mimetype	application/pdf	en
dc.language.iso	en	en
dc.publisher	AIP Publishing	en
dc.relation.ispartofseries	Applied Physics Letters	en
dc.relation.ispartofseries	Volume 82, Issue 1
dc.rights	© 2003 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap	en
dc.subject.other	Physics	en
dc.title	Observation of defect complexes containing Ga vacancies in GaAsN	en
dc.type	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä	fi
dc.description.version	Peer reviewed	en
dc.rights.holder	AIP Publishing
dc.contributor.school	Sähkötekniikan korkeakoulu	fi
dc.contributor.school	School of Electrical Engineering	en
dc.contributor.department	Department of Micro and Nanosciences	en
dc.contributor.department	Mikro- ja nanotekniikan laitos	fi
dc.subject.keyword	vacancies	en
dc.subject.keyword	annealing	en
dc.subject.keyword	photoluminescence	en
dc.subject.keyword	positrons	en
dc.subject.keyword	compound semiconductors	en
dc.subject.keyword	metalorganic vapor phase epitaxy	en
dc.subject.keyword	dilute nitrides	en
dc.subject.keyword	positron spectroscopy	en
dc.identifier.urn	URN:NBN:fi:aalto-201505042535
dc.type.dcmitype	text	en
dc.identifier.doi	10.1063/1.1533843
dc.type.version	Final published version	en

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