Enhanced luminescence from catalyst-free grown InP nanowires

Mattila, M.; Hakkarainen, T.; Lipsanen, Harri; Jiang, H.; Kauppinen, Esko I.

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Enhanced luminescence from catalyst-free grown InP nanowires

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Title:	Enhanced luminescence from catalyst-free grown InP nanowires
Author(s):	Mattila, M. ; Hakkarainen, T. ; Lipsanen, Harri ; Jiang, H. ; Kauppinen, Esko I.
Date:	2007
Language:	en
Pages:	033101/1-3
Department:	Mikro- ja nanotekniikan laitos Department of Micro and Nanosciences
Series:	Applied Physics Letters, Volume 90, Issue 3
ISSN:	0003-6951 (printed)
DOI-number:	10.1063/1.2431711
Subject:	Physics
Keywords:	nanowires, photoluminescence, III‐V semiconductors, blue shift, transmission electron microscopy, catalyst-free growth
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Citation: Mattila, M. & Hakkarainen, T. & Lipsanen, Harri & Jiang, H. & Kauppinen, E. I. 2007. Enhanced luminescence from catalyst-free grown InP nanowires. Applied Physics Letters. Volume 90, Issue 3. P. 033101/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2431711.
Abstract: The surface effects in the optical properties of catalyst-free grownInPnanowires are investigated. Both as-grown nanowires and nanowires treated with hydrofluoric acid are studied using low- and room-temperature continuous-wave and time-resolved photoluminescence measurements and transmission electron microscopy. It is shown that the room-temperature photoluminescence intensity is increased by two orders of magnitude after the surface treatment, and that there is also a significant increase in the double-exponential photoluminescence decay time.
Rights: © 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap
Permanent link to this item: http://urn.fi/URN:NBN:fi:aalto-201505042531 Email this Export to RefWorks QR Code Print BibTex Tweet

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