Tensile-strained GaAsN quantum dots on InP

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Pohjola, P.
dc.contributor.author Hakkarainen, T.
dc.contributor.author Koskenvaara, H.
dc.contributor.author Sopanen, Markku
dc.contributor.author Lipsanen, Harri
dc.contributor.author Sainio, J.
dc.date.accessioned 2015-05-04T09:01:20Z
dc.date.available 2015-05-04T09:01:20Z
dc.date.issued 2007
dc.identifier.citation Pohjola, P. & Hakkarainen, T. & Koskenvaara, H. & Sopanen, M. & Lipsanen, Harri & Sainio, J. 2007. Tensile-strained GaAsN quantum dots on InP. Applied Physics Letters. Volume 90, Issue 17. P. 172110/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2719662. en
dc.identifier.issn 0003-6951 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/15865
dc.description.abstract Self-assembled quantum dots are typically fabricated from compressive-strained material systems, e.g., InAs on GaAs. In this letter, self-assembled quantum dots from tensile-strained GaAsN on InP are demonstrated. GaAsN on InP has type-I band alignment. Stranski-Krastanov growth mode is not observed, but in situannealing of the uncapped samples results in the formation of islands. Photoluminescence spectra from the buried GaAsN show separate peaks due to a wetting layer and islands around the energies of 1.3 and 1.1eV, respectively. en
dc.format.extent 172110/1-3
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Applied Physics Letters en
dc.relation.ispartofseries Volume 90, Issue 17
dc.rights © 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap en
dc.subject.other Physics en
dc.title Tensile-strained GaAsN quantum dots on InP en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Institute of Physics
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Department of Micro and Nanosciences en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.subject.keyword quantum dots en
dc.subject.keyword annealing en
dc.subject.keyword III‐V semiconductors en
dc.subject.keyword wetting en
dc.subject.keyword quantum wells en
dc.identifier.urn URN:NBN:fi:aalto-201505042530
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.2719662
dc.type.version Final published version en


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