Mechanistic investigation of ZnO nanowire growth

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en Rackauskas, Simas Nasibulin, Albert G. Jiang, Hua Tian, Ying Statkute, Gintare Shandakov, Sergey D. Lipsanen, Harri Kauppinen, Esko I. 2015-05-04T09:01:11Z 2015-05-04T09:01:11Z 2009
dc.identifier.citation Rackauskas, Simas & Nasibulin, Albert G. & Jiang, Hua & Tian, Ying & Statkute, Gintare & Shandakov, Sergey D. & Lipsanen, Harri & Kauppinen, Esko I. 2009. Mechanistic investigation of ZnO nanowire growth. Applied Physics Letters. Volume 95, Issue 18. P. 183114/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.3258074. en
dc.identifier.issn 0003-6951 (printed)
dc.description.abstract ZnO nanowire (NW) growth mechanism was investigated in a nonvapor and noncatalytic approach for the controlled NW synthesis in a second time scale. The experimental results showed what ZnO NW growth was determined by migration of zincinterstitials and vacancies in a ZnO layer, which should be also considered in other synthesis techniques and mechanisms. The mechanism of the ZnO NW growth was explained as due to the advantageous diffusion through grain boundaries in ZnO layer and crystal defects in NWs. Additionally, on the basis of photoluminescence measurements, a feasible application of as-produced wires for optoelectronic devices was demonstrated. en
dc.format.extent 183114/1-3
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Applied Physics Letters en
dc.relation.ispartofseries Volume 95, Issue 18
dc.rights © 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. en
dc.subject.other Physics en
dc.title Mechanistic investigation of ZnO nanowire growth en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Institute of Physics Sähkötekniikan korkeakoulu fi School of Electrical Engineering en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.contributor.department Department of Micro and Nanosciences en
dc.subject.keyword II‐VI semiconductors en
dc.subject.keyword zinc en
dc.subject.keyword interstitial defects en
dc.subject.keyword photoluminescence en
dc.subject.keyword vacancies en
dc.subject.keyword diffusion en
dc.subject.keyword grain boundaries en
dc.subject.keyword nanotechnology en
dc.identifier.urn URN:NBN:fi:aalto-201505042528
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.3258074
dc.type.version Final published version en

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