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Stress release mechanisms for Cu on Pd(111) in the submonolayer and monolayer regimes

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Jalkanen, J.
dc.contributor.author Rossi, G.
dc.contributor.author Trushin, O.
dc.contributor.author Granato, E.
dc.contributor.author Ala-Nissilä, Tapio
dc.contributor.author Ying, S.-C.
dc.date.accessioned 2015-04-28T09:45:23Z
dc.date.available 2015-04-28T09:45:23Z
dc.date.issued 2010
dc.identifier.citation Jalkanen, J. & Rossi, G. & Trushin, O. & Granato, E. & Ala-Nissilä, Tapio & Ying, S.-C. 2010. Stress release mechanisms for Cu on Pd(111) in the submonolayer and monolayer regimes. Physical Review B. Volume 81, Issue 4. P. 041412/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.81.041412. en
dc.identifier.issn 1098-0121 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/15811
dc.description.abstract We study the strain relaxation mechanisms of Cu on Pd(111) up to the monolayer regime using two different computational methodologies, basin-hopping global optimization and energy minimization with a repulsive bias potential. Our numerical results are consistent with experimentally observed layer-by-layer growth mode. However, we find that the structure of the Cu layer is not fully pseudomorphic even at low coverages. Instead, the Cu adsorbates forms fcc and hcp stacking domains, separated by partial misfit dislocations. We also estimate the minimum energy path and energy barriers for transitions from the ideal epitaxial state to the fcc-hcp domain pattern. en
dc.format.extent 041412/1-4
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Physical Society (APS) en
dc.relation.ispartofseries Physical Review B en
dc.relation.ispartofseries Volume 81, Issue 4
dc.rights © 2010 American Physical Society (APS). http://www.aps.org en
dc.subject.other Physics en
dc.title Stress release mechanisms for Cu on Pd(111) in the submonolayer and monolayer regimes en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Physical Society (APS)
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.contributor.department Department of Applied Physics en
dc.subject.keyword thin films en
dc.subject.keyword heteroepitaxy en
dc.subject.keyword dislocation en
dc.identifier.urn URN:NBN:fi:aalto-201504282472
dc.type.dcmitype text en
dc.identifier.doi 10.1103/physrevb.81.041412
dc.type.version Final published version en

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