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Effect of transition metals on oxygen precipitation in silicon

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Talvitie, Heli
dc.contributor.author Haarahiltunen, Antti
dc.contributor.author Yli-Koski, Marko
dc.contributor.author Savin, Hele
dc.contributor.author Sinkkonen, Juha
dc.date.accessioned 2015-04-11T09:00:35Z
dc.date.available 2015-04-11T09:00:35Z
dc.date.issued 2008
dc.identifier.citation Talvitie, Heli & Haarahiltunen, Antti & Yli-Koski, Marko & Savin, Hele & Sinkkonen, Juha. 2008. Effect of transition metals on oxygen precipitation in silicon. Journal of Physics: Conference Series. Volume 100, Part 7. 1742-6596 (electronic). 10.1088/1742-6596/100/7/072045. en
dc.identifier.issn 1742-6596 (electronic) fi
dc.identifier.issn 1742-6588 (printed) fi
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/15616
dc.description.abstract Effects of iron and copper impurities on the amount of precipitated oxygen and the oxide precipitate and stacking fault densities in Czochralski-grown silicon have been studied under varying thermal anneals. Silicon wafers were intentionally contaminated with iron or copper and subsequently subjected to different two-step heat treatments to induce oxygen precipitation. The iron contamination level was 2 × 10exp13cm-3 and copper contamination level 6 × 10exp13cm-3. Experiments did not show that iron contamination would have any effect on the amount of precipitated oxygen or the defect densities. Copper contamination tests showed some indication of enhanced oxygen precipitation. en
dc.format.extent 4
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IOP Publishing en
dc.relation.ispartofseries Journal of Physics: Conference Series en
dc.relation.ispartofseries Volume 100, Part 4
dc.rights © IOP Publishing 2008. This work is distributed under the Creative Commons Attribution 3.0 License. http://iopscience.iop.org/1742-6596/100/7/072045 fi
dc.subject.other Electrical engineering en
dc.subject.other Physics en
dc.title Effect of transition metals on oxygen precipitation in silicon en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder IOP Publishing
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.contributor.department Department of Micro and Nanosciences en
dc.subject.keyword iron en
dc.subject.keyword copper en
dc.subject.keyword silicon en
dc.subject.keyword oxygen precipitation en
dc.subject.keyword impurities en
dc.subject.keyword Czochralski-grown silicon en
dc.subject.keyword wafer en
dc.subject.keyword contamination en
dc.subject.keyword metal contamination en
dc.subject.keyword boron en
dc.identifier.urn URN:NBN:fi:aalto-201504102265
dc.type.dcmitype text en
dc.identifier.doi 10.1088/1742-6596/100/7/072045
dc.type.version Final published version en

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