Modeling phosphorus diffusion gettering of iron in single crystal silicon

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Haarahiltunen, Antti
dc.contributor.author Savin, Hele
dc.contributor.author Yli-Koski, Marko
dc.contributor.author Talvitie, Heli
dc.contributor.author Sinkkonen, Juha
dc.date.accessioned 2015-04-09T09:01:31Z
dc.date.available 2015-04-09T09:01:31Z
dc.date.issued 2009
dc.identifier.citation Haarahiltunen, Antti & Savin, Hele & Yli-Koski, Marko & Talvitie, Heli & Sinkkonen, Juha. 2009. Modeling phosphorus diffusion gettering of iron in single crystal silicon. Journal of Applied Physics. Volume 105, Issue 2. 0021-8979 (printed). DOI: 10.1063/1.3068337 en
dc.identifier.issn 0021-8979 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/15602
dc.description.abstract We propose a quantitative model for phosphorus diffusion gettering (PDG) of iron in silicon, which is based on a special fitting procedure to experimental data. We discuss the possibilities of the underlying physics of the segregation coefficient. Finally, we show that the proposed PDG model allows quantitative analysis of gettering efficiency of iron at various processing conditions. en
dc.format.extent 4
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Journal of Applied Physics en
dc.relation.ispartofseries Volume 105, Issue 2
dc.rights Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap en
dc.subject.other Energy en
dc.subject.other Physics en
dc.subject.other Electrical engineering en
dc.title Modeling phosphorus diffusion gettering of iron in single crystal silicon en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Institute of Physics
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Department of Micro and Nanosciences en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.subject.keyword phosphorus diffusion gettering en
dc.subject.keyword iron en
dc.subject.keyword silicon en
dc.subject.keyword gettering efficiency en
dc.subject.keyword PDG en
dc.subject.keyword solar cells en
dc.subject.keyword segregation coefficient en
dc.identifier.urn URN:NBN:fi:aalto-201504092256
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.3068337
dc.type.version Final published version en


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