Citation:
Haarahiltunen, Antti & Savin, Hele & Yli-Koski, Marko & Talvitie, Heli & Sinkkonen, Juha. 2009. Modeling phosphorus diffusion gettering of iron in single crystal silicon. Journal of Applied Physics. Volume 105, Issue 2. 0021-8979 (printed). DOI: 10.1063/1.3068337
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