Modeling the effect of mobile ion contamination on the stability of a  microelectromechanical resonator

Haarahiltunen, Antti; Varpula, Aapo; Savin, Hele

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Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator

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Title:	Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator
Author(s):	Haarahiltunen, Antti ; Varpula, Aapo ; Savin, Hele
Date:	2011
Language:	en
Pages:	5
Department:	Department of Micro and Nanosciences Mikro- ja nanotekniikan laitos
Series:	Journal of Applied Physics, Volume 110, Issue 4
ISSN:	0021-8979 (printed)
DOI-number:	10.1063/1.3622511
Subject:	Electrical engineering, Physics
Keywords:	mobile ion contamination, silicon microelectromechanical resonator, stability, silicon, MEM resonator, capasitance, resonance frequency, frequency drift
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Citation: Haarahiltunen, Antti & Varpula, Aapo & Savin, Hele. 2011. Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator. Journal of Applied Physics. Volume 110, Issue 4. 0021-8979 (printed). DOI: 10.1063/1.3622511.
Abstract: We present a theoretical model for mobile ion contamination in a silicon microelectromechanical resonator. In the model both drift and diffusion of the mobile charge in dielectric films are taken into account. The model is verified through a comparison to existing experimental data. We show that the model can describe the frequency drift of resonators in a wide temperature range.
Rights: Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap
Permanent link to this item: http://urn.fi/URN:NBN:fi:aalto-201504092253 Email this Export to RefWorks QR Code Print BibTex Tweet

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