Nickel: A very fast diffuser in silicon

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Lindroos, Jeanette
dc.contributor.author Fenning, David P.
dc.contributor.author Backlund, Daniel J.
dc.contributor.author Verlage, Erik
dc.contributor.author Gorgulla, Angelika
dc.contributor.author Estreicher, Stefan K.
dc.contributor.author Savin, Hele
dc.contributor.author Buonassisi, Tonio
dc.date.accessioned 2015-04-09T09:01:13Z
dc.date.available 2015-04-09T09:01:13Z
dc.date.issued 2013
dc.identifier.citation Lindroos, Jeanette & Fenning, David P. & Backlund, Daniel J. & Verlage, Erik & Gorgulla, Angelika & Estreicher, Stefan K. & Savin, Hele & Buonassisi, Tonio. 2013. Nickel: A very fast diffuser in silicon. Journal of Applied Physics. Volume 113, Number 20. 0021-8979 (printed). DOI: 10.1063/1.4807799. en
dc.identifier.issn 0021-8979 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/15598
dc.description.abstract Nickel is increasingly used in both IC and photovoltaic device fabrication, yet it has the potential to create highly recombination-active precipitates in silicon. For nearly three decades, the accepted nickel diffusivity in silicon has been DNi(T)=2.3×10exp−3 exp(−0.47 eV/kBT) cm2/s, a surprisingly low value given reports of rapid nickel diffusion in industrial applications. In this paper, we employ modern experimental methods to measure the higher nickel diffusivity DNi(T)=(1.69±0.74)×10exp−4 exp(−0.15±0.04 eV/kBT)  cm2/s. The measured activation energy is close to that predicted by first-principles theory using the nudged-elastic-band method. Our measured diffusivity of nickel is higher than previously published values at temperatures below 1150 °C, and orders of magnitude higher when extrapolated to room temperature. en
dc.format.extent 7
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Journal of Applied Physics en
dc.relation.ispartofseries Volume 113, Number 20
dc.rights Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap en
dc.subject.other Energy en
dc.subject.other Physics en
dc.subject.other Electrical engineering en
dc.title Nickel: A very fast diffuser in silicon en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Institute of Physics
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Department of Micro and Nanosciences en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.subject.keyword solar cells en
dc.subject.keyword diffusion en
dc.subject.keyword nickel en
dc.subject.keyword silicon en
dc.subject.keyword wafer en
dc.subject.keyword integrated circuit devices en
dc.subject.keyword accumulation experiment en
dc.subject.keyword nickel diffusivity
dc.identifier.urn URN:NBN:fi:aalto-201504092251
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.4807799
dc.type.version Final published version en


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