Modeling of heterogeneous precipitation of iron in silicon
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Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2005
Major/Subject
Mcode
Degree programme
Language
en
Pages
3
Series
Applied Physics Letters, Vol. 87, Issue 15
Abstract
A model is presented for the growth and dissolution of iron precipitates at oxygen-related defects in silicon during thermal processing. The heterogeneous nucleation of iron is taken into account by special growth and dissolution rates, which are inserted into a set of modified chemical rate equations. This approach allows us to calculate the size distribution of iron precipitates and the residual iron concentration. By comparing the simulated results with experimental ones, it is proven that this model can be used to estimate the internal gettering efficiency of iron under a variety of processing conditions.Description
Keywords
iron precipitates, iron concentration, internal gettering, gettering efficiency, modeling
Other note
Citation
Haarahiltunen, Antti & Väinölä, Hele & Anttila, O. & Saarnilehto, E. & Yli-Koski, Marko & Storgårds, Jan & Sinkkonen, Juha. 2005. Modeling of heterogeneous precipitation of iron in silicon. Applied Physics Letters. Vol. 87, Issue 15. 0003-6951 (printed). DOI: 10.1063/1.2099531.
