Modeling boron diffusion gettering of iron in silicon solar cells

 |  Login

Show simple item record

dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Savin, Hele
dc.contributor.author Talvitie, Heli
dc.contributor.author Yli-Koski, Marko
dc.contributor.author Haarahiltunen, Antti
dc.contributor.author Asghar, M.I
dc.contributor.author Sinkkonen, Juha
dc.date.accessioned 2015-04-09T09:00:44Z
dc.date.available 2015-04-09T09:00:44Z
dc.date.issued 2008
dc.identifier.citation Savin, Hele & Talvitie, Heli & Yli-Koski, Marko & Haarahiltunen, Antti & Asghar, M.I & Sinkkonen, Juha. 2008. Modeling boron diffusion gettering of iron in silicon solar cells. Applied Physics Letters. Vol. 92, Issue 2. ISSN 0003-6951 (printed). DOI: 10.1063/1.2833698. en
dc.identifier.issn 0003-6951 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/15591
dc.description.abstract In this paper, a model is presented for boron diffusion gettering of iron in silicon during thermal processing. In the model, both the segregation of iron due to high boron doping concentration and heterogeneous precipitation of iron to the surface of the wafer are taken into account. It is shown, by comparing simulated results with experimental ones, that this model can be used to estimate boron diffusion gettering efficiency of iron under a variety of processing conditions. Finally, the application of the model to phosphorus diffusion gettering is discussed. en
dc.format.extent 3
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Applied Physics Letters en
dc.relation.ispartofseries Vol. 92, Issue 2
dc.rights Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/apl en
dc.subject.other Energy en
dc.subject.other Physics en
dc.subject.other Electrical engineering en
dc.title Modeling boron diffusion gettering of iron in silicon solar cells en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Institute of Physics
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Department of Micro and Nanosciences en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.subject.keyword silicon en
dc.subject.keyword iron en
dc.subject.keyword solar cells en
dc.subject.keyword boron diffusion gettering en
dc.subject.keyword modeling en
dc.subject.keyword wafer en
dc.subject.keyword surface en
dc.subject.keyword B gettering en
dc.subject.keyword P gettering en
dc.subject.keyword BDG en
dc.identifier.urn URN:NBN:fi:aalto-201504082164
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.2833698
dc.type.version Final published version en


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search archive


Advanced Search

article-iconSubmit a publication

Browse