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Room-temperature method for minimizing light-induced degradation in crystalline silicon

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Lindroos, Jeanette
dc.contributor.author Yli-koski, Marko
dc.contributor.author Haarahiltunen, Antti
dc.contributor.author Savin, Hele
dc.date.accessioned 2015-04-09T09:00:36Z
dc.date.available 2015-04-09T09:00:36Z
dc.date.issued 2012
dc.identifier.citation Lindroos, Jeanette & Yli-koski, Marko & Haarahiltunen, Antti & Savin, Hele. 2012. Room-temperature method for minimizing light-induced degradation in crystalline silicon. Applied Physics Letters. Vol. 101, Issue 24. 0003-6951 (printed). DOI: 10.1063/1.4769809. en
dc.identifier.issn 0003-6951 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/15589
dc.description.abstract Although light-induced degradation (LID) in crystalline silicon is attributed to the formation of boron-oxygen recombination centers, copper contamination of silicon has recently been observed to result in similar degradation. As positively charged interstitialcopper stays mobile at room temperature in silicon, we show that the bulk copper concentration can be reduced by depositing a large negative charge onto the wafer surface. Consequently, light-induced degradation is reduced significantly in both low- and high-resistivity boron-doped Czochralski-grown silicon. en
dc.format.extent 3
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Applied Physics Letters en
dc.relation.ispartofseries Vol. 101, Issue 24
dc.rights Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/apl en
dc.subject.other Energy en
dc.subject.other Physics en
dc.subject.other Electrical engineering en
dc.title Room-temperature method for minimizing light-induced degradation in crystalline silicon en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Institute of Physics
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Department of Micro and Nanosciences en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.subject.keyword copper contamination en
dc.subject.keyword crystalline silicon en
dc.subject.keyword light-induced degradation en
dc.subject.keyword LID en
dc.subject.keyword solar cells en
dc.subject.keyword illumination en
dc.subject.keyword wafer en
dc.subject.keyword surface charge en
dc.subject.keyword room-temperature en
dc.identifier.urn URN:NBN:fi:aalto-201504082162
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.4769809
dc.type.version Final published version en

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