Experimental evidence on removing copper and light-induced degradation from silicon by negative charge

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Boulfrad, Yacine
dc.contributor.author Lindroos, Jeanette
dc.contributor.author Wagner, Matthias
dc.contributor.author Wolny, Franziska
dc.contributor.author Yli-Koski, Marko
dc.contributor.author Savin, Hele
dc.date.accessioned 2015-04-09T09:00:22Z
dc.date.available 2015-04-09T09:00:22Z
dc.date.issued 2014
dc.identifier.citation Boulfrad, Yacine & Lindroos, Jeanette & Wagner, Matthias & Wolny, Franziska & Yli-Koski, Marko & Savin, Hele. 2014. Experimental evidence on removing copper and light-induced degradation from silicon by negative charge. Applied Physics Letters. Vol. 105, Issue 18. 1077-3118 (electronic). DOI: 10.1063/1.4901533 en
dc.identifier.issn 1077-3118 (electronic)
dc.identifier.issn 0003-6951 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/15586
dc.description.abstract In addition to boron and oxygen, copper is also known to cause light-induced degradation (LID) in silicon. We have demonstrated previously that LID can be prevented by depositing negative corona charge onto the wafer surfaces. Positively charged interstitial copper ions are proposed to diffuse to the negatively charged surface and consequently empty the bulk of copper. In this study, copper out-diffusion was confirmed by chemical analysis of the near surface region of negatively/positively charged silicon wafer. Furthermore, LID was permanently removed by etching the copper-rich surface layer after negative charge deposition. These results demonstrate that (i) copper can be effectively removed from the bulk by negative charge, (ii) under illumination copper forms a recombination active defect in the bulk of the wafer causing severe light induced degradation. en
dc.format.extent 3
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Applied Physics Letters en
dc.relation.ispartofseries Vol. 105, Issue 18
dc.rights Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/apl en
dc.subject.other Physics en
dc.subject.other Energy en
dc.subject.other Electrical engineering en
dc.title Experimental evidence on removing copper and light-induced degradation from silicon by negative charge en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Institute of Physics
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Department of Micro and Nanosciences en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.subject.keyword copper en
dc.subject.keyword silicon en
dc.subject.keyword light-induced degradation en
dc.subject.keyword LID en
dc.subject.keyword etching en
dc.subject.keyword surfaces en
dc.subject.keyword illumination en
dc.subject.keyword wafer en
dc.subject.keyword solar cells en
dc.identifier.urn URN:NBN:fi:aalto-201504072159
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.4901533
dc.type.version Final published version en

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