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Establishment of an Angle Resolved Reflectometry Setup to Characterize GaN LED Structure

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.advisor Sopanen, Markku
dc.contributor.author Khan, Atif
dc.date.accessioned 2014-12-04T07:09:47Z
dc.date.available 2014-12-04T07:09:47Z
dc.date.issued 2014-11-20
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/14604
dc.description.abstract High quality, epitaxially grown GaN light emitting diode (LED) structure using metal organic vapor phase epitaxy (MOVPE) system is experimented in this report. A single and thin InGaN quantum well (QW) with the emission peak at the wavelength of 475 nm is grown epitaxially into this heterostructure as the active region. Next, a silver grating is formed on the heterostructure by electron beam lithography (EBL) and lift-off technique. Afterwards, the fabricated device is characterized with photoluminescence (PL), atomic force microscopy (AFM) and scanning electron microscopy (SEM) to examine the device quality. An angle resolved optical setup is designed and built based on Fourier optics. For reflectometry operation, white light is incident on the sample at the grating side. The reflected light forms a Fourier plane after passing through an objective lens. This plane contains various reflection angles at different vertical positions. Then it is focused at a monochromator entrance slit by using a Fourier lens. The monochromator grating diffracts this Fourier image and finally angle vs. wavelength information is captured by a charge coupled device (CCD) camera, attached to the monochromator exit slit. The CCD image exhibits Fabry-Perot interference arcs with no surface plasmon (SP) effect. This obtained data is then compared to the MATLAB simulated interference arcs by superimposing on them. Finally, the principle behind these obtained arcs are analyzed qualitatively to justify the instrumental performance. en
dc.format.extent 57+10
dc.language.iso en en
dc.title Establishment of an Angle Resolved Reflectometry Setup to Characterize GaN LED Structure en
dc.type G2 Pro gradu, diplomityö en
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.subject.keyword LED en
dc.subject.keyword GaN en
dc.subject.keyword quantum well en
dc.subject.keyword surface plasmons en
dc.subject.keyword silver grating en
dc.subject.keyword MOVPE en
dc.subject.keyword fourier imaging en
dc.subject.keyword reflectometry en
dc.subject.keyword fabry-perot interference en
dc.subject.keyword photoluminescence. en
dc.identifier.urn URN:NBN:fi:aalto-201412043135
dc.programme.major Micro and Nanotechnology fi
dc.programme.mcode S3010 fi
dc.type.ontasot Master's thesis en
dc.type.ontasot Diplomityö fi
dc.contributor.supervisor Lipsanen, Harri
dc.programme EST - Master’s Programme in Micro and Nanotechnology fi
dc.location P1 fi
local.aalto.openaccess no
local.aalto.digifolder Aalto_92090
dc.rights.accesslevel closedAccess
local.aalto.idinssi 50169
dc.type.publication masterThesis
dc.type.okm G2 Pro gradu, diplomityö

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