Title: | From computational models to improved light-emitting diodes and new devices Laskennallisista malleista paranneltuihin ledeihin sekä uusiin fotoniikkakomponentteihin |
Author(s): | Kivisaari, Pyry |
Date: | 2014 |
Language: | en |
Pages: | 102 + app. 81 |
Department: | Lääketieteellisen tekniikan ja laskennallisen tieteen laitos Department of Biomedical Engineering and Computational Science |
ISBN: | 978-952-60-5992-1 (electronic) 978-952-60-5991-4 (printed) |
Series: | Aalto University publication series DOCTORAL DISSERTATIONS, 198/2014 |
ISSN: | 1799-4942 (electronic) 1799-4934 (printed) 1799-4934 (ISSN-L) |
Supervising professor(s): | Tulkki, Jukka, Prof. Aalto University, Department of Biomedical Engineering and Computational Science BECS, Finland |
Thesis advisor(s): | Oksanen, Jani, Dr., Aalto University, Department of Biomedical Engineering and Computational Science, Finland |
Subject: | Electrical engineering, Physics |
Keywords: | light-emitting diodes, efficiency droop, numerical simulation, device physics, ledit, ledien hyötysuhde, numeerinen mallintaminen, komponenttifysiikka |
OEVS yes | |
|
|
Abstract:III-V-ryhmän nitrideihin perustuvien ledikomponenttien kehitys on mahdollistanut niiden nopean yleistymisen valaistussovelluksissa. Tämä on johtamassa merkittäviin parannuksiin valaistuksen energiatehokkuudessa sekä mahdollistamassa globaalin energiankulutuksen vähentämisen. Nopeasta kehityksestä huolimatta kaupallisten ledien toimintaa voidaan vielä merkittävästi parantaa, jos haasteet niiden hyötysuhteessa ja erityisesti hyötysuhteen pienenemisessä suurilla tehoilla saadaan ratkaistua. |
|
Parts:[Publication 1]: Pyry Kivisaari, Jani Oksanen, and Jukka Tulkki. Effects of lateral current injection in GaN multi-quantum well light-emitting diodes. Journal of Applied Physics, 111, 103120, May 2012. DOI 10.1063/1.4720584. View at Publisher [Publication 2]: Pyry Kivisaari, Jani Oksanen, and Jukka Tulkki. Effects of direct lateral Current Injection on the Performance, Overall Efficiency and Emission Distribution in GaN LED structures: a 2D Computational Study. MRS Proceedings, 1370, June 2011. DOI 10.1557/opl.2011.896. View at Publisher [Publication 3]: Pyry Kivisaari, Lauri Riuttanen, Jani Oksanen, Sami Suihkonen, Muhammad Ali, Harri Lipsanen, and Jukka Tulkki. Electrical measurement of internal quantum efficiency and extraction efficiency of III-N light-emitting diodes. Applied Physics Letters, 101, 021113, July 2012. DOI 10.1063/1.4736565. View at Publisher [Publication 4]: Pyry Kivisaari, Toufik Sadi, Jani Oksanen, and Jukka Tulkki. Monte Carlo–drift-diffusion simulation of electron current transport in III-N LEDs. Proceedings of SPIE, 8980, 898003, February 2014. DOI 10.1117/12.2040074. View at Publisher [Publication 5]: Toufik Sadi, Pyry Kivisaari, Jani Oksanen, and Jukka Tulkki. On the correlation of the Auger generated hot electron emission and efficiency droop in III-N LEDs. Applied Physics Letters, 105, 091106, September 2014. DOI 10.1063/1.4894862. View at Publisher [Publication 6]: Pyry Kivisaari, Jani Oksanen, and Jukka Tulkki. Diffusion-assisted current spreading for III-nitride light-emitting applications. Proceedings of SPIE, 8625, 862528, February 2013. DOI 10.1117/12.2000441. View at Publisher [Publication 7]: Pyry Kivisaari, Jani Oksanen, and Jukka Tulkki. Current injection to free-standing III-N nanowires by bipolar diffusion. Applied Physics Letters, 103, 031103, July 2013. DOI 10.1063/1.4813754. View at Publisher [Publication 8]: Lauri Riuttanen, Pyry Kivisaari, Henri Nykänen, Olli Svensk, Sami Suihkonen, Jani Oksanen, Jukka Tulkki, and Markku Sopanen. Diffusion injected multi-quantum well light-emitting diode structure. Applied Physics Letters, 104, 081102, February 2014. DOI 10.1063/1.4866343. View at Publisher [Publication 9]: Pyry Kivisaari, Jani Oksanen, and Jukka Tulkki. Polarization doping and the efficiency of III-nitride optoelectronic devices. Applied Physics Letters, 103, 211118, November 2013. DOI 10.1063/1.4833155. View at Publisher [Publication 10]: Lauri Riuttanen, Pyry Kivisaari, Nikolai Mäntyoja, Jani Oksanen, Muhammad Ali, Sami Suihkonen, and Markku Sopanen. Recombination lifetime in InGaN/GaN based light emitting diodes at low current densities by differential carrier lifetime analysis. Physica Status Solidi C, 10, 327–331, March 2013. DOI 10.1002/pssc.201200670. View at Publisher |
|
|
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Page content by: Aalto University Learning Centre | Privacy policy of the service | About this site