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Study of van der Waals heterostructure-based PN junction for electronics and optoelectronic applications

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.advisor Mehmood, Naveed
dc.contributor.author Khalid, Fooqia
dc.date.accessioned 2023-01-29T18:17:18Z
dc.date.available 2023-01-29T18:17:18Z
dc.date.issued 2023-01-23
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/119476
dc.description.abstract The present technological requirements have urged researchers to explore the world of 2D materials. The extraordinary capabilities and multi-functional characteristics exhibited by these layered materials have gained interest ever since graphene was isolated. Extensive studies have been completed which have introduced many groups of 2D materials including elemental 2D materials, transition metal dichalcogenides (TMDC), mono-chalcogenides (MC), oxides etc. The heterostructures stacks of these layered materials held together by weak van der Waals forces result in novel properties for electronic and optoelectronic devices. We fabricated and characterized a p-type GeAs and n-type InSe based vdW heterostructure junction in this work. The fabrication was completed through the deterministic dry transfer of mechanically cleaved InSe and GeAs on pre-patterned gold electrodes. Annealing of the devices allowed smooth contact at the junction and resulted in enhanced charge transport. A rectification ratio ranging between 10 – 105 was calculated at zero back gate voltage and Vd = +2/-2. The devices were examined for photovoltaic characteristics, the junction was illuminated with a wavelength of 532 etam with increasing power levels (0.1 microW - 100 microW), and the responsivity was found to be 6.4 AW-1. Photocurrent maps and IV plots were also acquired and analyzed. en
dc.format.extent 56
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.title Study of van der Waals heterostructure-based PN junction for electronics and optoelectronic applications en
dc.type G2 Pro gradu, diplomityö fi
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.subject.keyword PN junctions en
dc.subject.keyword optoelectronics en
dc.subject.keyword 2D materials en
dc.subject.keyword heterostructures en
dc.identifier.urn URN:NBN:fi:aalto-202301291826
dc.programme.major Photonics and Nanotechnology fi
dc.programme.mcode ELEC3052 fi
dc.type.ontasot Master's thesis en
dc.type.ontasot Diplomityö fi
dc.contributor.supervisor Lipsanen, Harri
dc.programme Master’s Programme in Electronics and Nanotechnology (TS2013) fi
dc.location P1 fi
local.aalto.electroniconly yes
local.aalto.openaccess yes

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