Optical and structural characterization of InGaN/GaN multiple quantum well structures irradiated by high energy heavy ions

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.advisor Ali, Muhammad; DI
dc.contributor.author Zhu, Zhen
dc.date.accessioned 2011-12-08T09:59:47Z
dc.date.available 2011-12-08T09:59:47Z
dc.date.issued 2008
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/1135
dc.description.abstract This topic is a cooperation project between Helsinki University of Technology (TKK) and Uppsala University (UU). Multiple quantum wells (MQWs) were grown and characterized in Department of Micro and Nanosciences of TKK. The samples were irradiated in Ångström Laboratory of UU. In this thesis, quantum well (QW) structures based on InGaN/GaN material system have been grown by using metalorganic vapor phase epitaxy (MOVPE). The samples grown had 5 and 10 quantum wells with 6 and 10% of indium, respectively. Iodine and bromine have been used as irradiations ions. The irradiation fluences of these ions were varied from 109 to 1012 ions/cm2. Our X-ray diffraction results have shown no signs of a major crystal damage on the quantum wells. The photoluminescence results indicate a strong dependence of the optical properties on the type and fluence of ions used for irradiation. en
dc.format.extent 49
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher Helsinki University of Technology en
dc.publisher Teknillinen korkeakoulu fi
dc.subject.other Physics en
dc.title Optical and structural characterization of InGaN/GaN multiple quantum well structures irradiated by high energy heavy ions en
dc.type G2 Pro gradu, diplomityö fi
dc.contributor.school Faculty of Electronics, Communications and Automation en
dc.contributor.school Elektroniikan, tietoliikenteen ja automaation tiedekunta fi
dc.contributor.department Department of Micro and Nanosciences en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.subject.keyword gallium nitride en
dc.subject.keyword indium gallium nitride en
dc.subject.keyword metalorganic vapor phase epitaxy en
dc.subject.keyword multiple quantum well en
dc.subject.keyword x-ray en
dc.subject.keyword photoluminescence en
dc.subject.keyword irradiation en
dc.subject.keyword fluence en
dc.identifier.urn urn:nbn:fi:tkk-012900
dc.type.dcmitype text en
dc.programme.major Optoelectronics en
dc.programme.major Optoelektroniikka fi
dc.programme.mcode S-104
dc.type.ontasot Diplomityö fi
dc.type.ontasot Master's thesis en
dc.contributor.supervisor Sopanen, Markku; Dosentti
dc.programme Elektroniikan ja sähkötekniikan koulutus-/tutkinto-ohjelma fi
dc.location P1 fi

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