Characterization of silicon micro-optical waveguides

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.advisor Säynätjoki, Antti; TkT
dc.contributor.author Khanna, Amit
dc.date.accessioned 2011-12-08T09:53:02Z
dc.date.available 2011-12-08T09:53:02Z
dc.date.issued 2008
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/1105
dc.description.abstract In modern electronic circuitry, electrical interconnects have not kept pace with increasing electronic processing speed. Various drawbacks of electrical domain viz. bandwidth limitation, signal delay, electromagnetic wave phenomenon propelled the use of optical fibers. Optical waveguides provide a novel solution because of the absence of these phenomena in the optical domain. Various materials like polymers, III-V semiconductor compounds, LiNbO3 etc. have been analyzed for fabricating optical waveguides. We have chosen silicon as a material for optical waveguides. Silicon is extensively used for complimentary metal oxide semiconductor (CMOS) transistor fabrication. Thus, to use silicon for fabricating optical components is highly favorable from a technological standpoint. In this thesis, we characterize silicon optical waveguides. Loss in 10µm wide hydrogenated amorphous silicon (a-Si:H) strip optical waveguides is estimated to be 1.5dB/cm and 0.1dB/cm in rib type silicon on insulator (SOI) optical waveguides. Reflectivity of Bragg mirror on a-Si:H strip waveguides is in the range 49-86%. We measured 0.5-1dB loss per etched mirror section for fundamental transverse electric (TE) and transverse magnetic (TM) modes propagating in SOI rib waveguide. A setup to measure birefringence in optical waveguides is discussed and its results are analyzed. Ellipsometry of 260nm thick layer of a-Si:H, deposited by plasma enhanced chemical vapor deposition (PECVD), is done to ascertain the material refractive index. Spectral behavior of a-Si:H waveguides using a supercontinuum source is also studied. en
dc.format.extent iv, 54
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher Helsinki University of Technology en
dc.publisher Teknillinen korkeakoulu fi
dc.subject.other Electrical engineering en
dc.title Characterization of silicon micro-optical waveguides en
dc.type G2 Pro gradu, diplomityö fi
dc.contributor.school Faculty of Electronics, Communications and Automation en
dc.contributor.school Elektroniikan, tietoliikenteen ja automaation tiedekunta fi
dc.contributor.department Department of Micro- and Nanosciences en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.subject.keyword silicon en
dc.subject.keyword optics en
dc.subject.keyword silicon photonics en
dc.subject.keyword attenuation en
dc.subject.keyword Bragg mirror en
dc.subject.keyword birefringence en
dc.subject.keyword transmission spectrum en
dc.subject.keyword amorphous silicon en
dc.subject.keyword strip waveguides en
dc.subject.keyword SOI waveguides en
dc.identifier.urn urn:nbn:fi:tkk-012416
dc.type.dcmitype text en
dc.programme.major Photonics en
dc.programme.major Optoelektroniikka fi
dc.programme.mcode S-104
dc.type.ontasot Diplomityö fi
dc.type.ontasot Master's thesis en
dc.contributor.supervisor Honkanen, Seppo; Prof.
dc.programme Elektroniikan ja sähkötekniikan tutkinto-ohjelma fi
dc.location P1 fi


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