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Processing and interconnections of semiconductor sensors for photon and particle radiation detection

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.advisor Härkönen Jaakko, Dr., Helsinki Institute of Physics, Finland, Prof., Ludong University, China
dc.contributor.advisor Luukka, Panja, Prof., Helsinki Institute of Physics and Lappeenranta-Lahti University of Technology, Finland
dc.contributor.author Gädda, Akiko
dc.date.accessioned 2021-10-20T09:00:09Z
dc.date.available 2021-10-20T09:00:09Z
dc.date.issued 2021
dc.identifier.isbn 978-952-64-0559-9 (electronic)
dc.identifier.isbn 978-952-64-0558-2 (printed)
dc.identifier.issn 1799-4942 (electronic)
dc.identifier.issn 1799-4934 (printed)
dc.identifier.issn 1799-4934 (ISSN-L)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/110478
dc.description Defence is held on 5.11.2021 12:00 – 15:00 https://aalto.zoom.us/j/66095957049
dc.description.abstract Semiconductor radiation detectors have made tremendous progress in the past few decades, increasing our understanding of physics with their detection precision. Despite these advances, there are several items that can be improved and developed. For instance, the method of sensor fabrication can be more simplified thus, the attention is given to the sensor processing this research. The detector bare module consisted of a segmented semiconductor sensor and an ASIC read-out chip (ROC). In the case of pixel detectors, the interconnection technology enables to complete a hybrid bare module. The hybrid bare module based on PSI46dig ROC read-out was used for this research with a read-out capability is 160 Mbit/s with a chip size of 7.9 × 10.3 mm2. The produced sensors were designed and fabricated in accordance with this ROC design. This thesis focuses especially on processing of sensors made of silicon and CdTe materials. Interconnection technology efforts are also emphasized as well. In particular, the research scope was to implement a more simple process introducing atomic layer deposition (ALD) thin film technology and the preparation of future higher density sensor structures. The characterization of sensors have been carried out by laboratory measurements using probe stations and transition current technique (TCT) measurements. Furthermore, functional tests of modules using different radioactive sources have been performed with a full read-out chain. en
dc.format.extent 110 + app. 68
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Aalto University en
dc.publisher Aalto-yliopisto fi
dc.relation.ispartofseries Aalto University publication series DOCTORAL DISSERTATIONS en
dc.relation.ispartofseries 145/2021
dc.relation.ispartofseries HIP Internal Report Series
dc.relation.ispartofseries 2021-04
dc.relation.haspart [Publication 1]: Gädda, J. Ott, S. Bharthuar, E. Brücken, M. Kalliokoski, A. Karadzhinova-Ferrer, M. Bezak, S. Kirschenmann, V. Litichevskyi, M. Golovleva, L. Martikainen, A. Winkler, V. Chmil, E. Tuovinen, P. Luukka, J. Härkönen. AC-coupled n-in-p pixel detectors on MCz silicon with atomic layer deposition (ALD) grown thin film. Nuclear Instruments and Methods in Physics Research A: Accelerators spectrometers detectors and associated equipment, Volume 986, Pages 164714, January 2021. Full text in Acris/Aaltodoc: http://urn.fi/URN:NBN:fi:aalto-202010235929. DOI: 10.1016/j.nima.2020.164714
dc.relation.haspart [Publication 2]: A. Gädda, J. Ott, A. Karadzhinova-Ferrer, M. Golovlevaa, M. Kalliokoski, A. Winkler, P. Luukka, J. Härkönen. Cadmium Telluride X-ray pad detectors with different passivation dielectrics. Nuclear Instruments and Methods in Physics Research A: Accelerators spectrometers detectors and associated equipment, Volume 924, Pages 33-37, April 2019. DOI: 10.1016/j.nima.2018.08.063
dc.relation.haspart [Publication 3]: A. Gädda, A. Winkler, J. Ott, J. Härkönen, A. Karadzhinova-Ferrer, A. Koponen, P. Luukka, J. Tikkanen, S. Vähänen. Advanced processing of CdTe pixel radiation detectors. Journal of Instrumentation, Volume 12, C12031, December 2017. DOI: 10.1088/1748-0221/12/12/C12031
dc.relation.haspart [Publication 4]: J. Ott, A. Gädda, S. Bharthuar, E. Brücken, M. Golovleva, J. Härkönen, M. Kalliokoski, A. Karadzhinova-Ferrer, S. Kirschenmann, V. Litichevskyi, P. Luukka, L. Martikainen, T. Naaranoja. Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide. Nuclear Instruments and Meth- ods in Physics Research A: Accelerators spectrometers detectors and associated equipment, Volume 958, Pages 162547, April 2020. Full text in Acris/Aaltodoc: http://urn.fi/URN:NBN:fi:aalto-202103312652. DOI: 10.1016/j.nima.2019.162547
dc.relation.haspart [Publication 5]: S. Spannagel on behalf of CMS Tracker Collaboration. Test beam performance measurements for the Phase I upgrade of the CMS pixel detector. IOP Journal of Instrumentation, Volume 12, Pages P05022, May 2017. DOI: 10.1088/1748-0221/12/05/P05022
dc.subject.other Chemistry en
dc.title Processing and interconnections of semiconductor sensors for photon and particle radiation detection en
dc.type G5 Artikkeliväitöskirja fi
dc.contributor.school Kemian tekniikan korkeakoulu fi
dc.contributor.school School of Chemical Technology en
dc.contributor.department Kemian ja materiaalitieteen laitos fi
dc.contributor.department Department of Chemistry and Materials Science en
dc.subject.keyword silicon en
dc.subject.keyword GaAs en
dc.subject.keyword CdTe en
dc.subject.keyword pixel detector en
dc.subject.keyword ALD en
dc.subject.keyword flip chip bonding en
dc.identifier.urn URN:ISBN:978-952-64-0559-9
dc.type.dcmitype text en
dc.type.ontasot Doctoral dissertation (article-based) en
dc.type.ontasot Väitöskirja (artikkeli) fi
dc.contributor.supervisor Franssila, Sami, Prof., Aalto University, Department of Chemistry and Materials Science, Finland
dc.opn Campbell, Michael Dr., CERN, Conseil européen pour la recherche nucléaire, Switzerland
dc.rev Unno, Yoshinobu, Prof Emeritus., KEK, High Energy Accelerator Research Organization, Japan
dc.rev Ohshima Takeshi, Dr., National Institutes for Quantum and Radiological Science and Technology, Japan
dc.date.defence 2021-11-05
local.aalto.acrisexportstatus checked 2021-11-08_1717
local.aalto.infra OtaNano
local.aalto.infra OtaNano - Aalto Nanofab/Micronova
local.aalto.formfolder 2021_10_19_klo_12_34
local.aalto.archive yes

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