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Carbon Nanotube Thin Film Transistors for Flexible Electronics

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.advisor Nasibulin, Albert G., Dr., Aalto University, Finland
dc.contributor.advisor Ohno, Yutaka, Prof., Nagoya University, Japan
dc.contributor.author Timmermans, Marina Y.
dc.date.accessioned 2013-08-30T10:27:43Z
dc.date.available 2013-08-30T10:27:43Z
dc.date.issued 2013
dc.identifier.isbn 978-952-60-5278-6 (electronic)
dc.identifier.isbn 978-952-60-5277-9 (printed)
dc.identifier.issn 1799-4942 (electronic)
dc.identifier.issn 1799-4934 (printed)
dc.identifier.issn 1799-4934 (ISSN-L)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/10937
dc.description.abstract The main objective of the emerging field of flexible macroelectronics is to develop scalable and cost effective routes to incorporate active circuit elements such as thin film transistors (TFTs) onto large-area flexible substrates. This dissertation reveals the promising potential of single-walled carbon nanotube (CNT) networks, synthesized using a floating catalyst (aerosol) chemical vapor deposition method, as an active layer material for TFTs. Direct dry or transfer printing techniques were developed for the deposition of as-grown CNTs in the form of random networks at room temperature and under atmospheric pressure onto any type of substrate, including heat-sensitive flexible materials. Patterned assembly of nanotubes and a lithography-free device fabrication technique were demonstrated. The results presented in this dissertation propose an alternative solution to remove existing manufacturing bottlenecks by capitalizing on the superb properties of pristine CNTs and minimizing the intermediate steps in the process flow between the nanotube synthesis and application, with the purpose of lowering manufacturing costs. The CNT growth conditions were optimized to produce high-quality, long nanotubes (up to 10 µm) with a narrow diameter distribution (mean diameter around 1.1 nm). The nanotube network material was integrated directly from the gas-phase synthesis reactor into TFTs with the channel lengths up to 100 µm. The effect of network morphologies, obtained by four different aerosol-based nanotube deposition techniques, on device performance was studied. The results demonstrated that long, partially aligned nanotubes with larger junction area and controlled density exhibit superior characteristics. Optimized CNT TFTs showed simultaneously high on/off current ratio of 6×106 and carrier mobility of 35 cm2V-1s-1 based on a parallel plate model for the gate capacitance estimation. When evaluated by a more rigorous analytical model, the highest mobility reached 1236 cm2V-1s-1 with concurrent on/off ratio of 1.5×104, making these TFTs attractive for post-silicon technologies. Successful operation of CNT TFTs and functional integrated circuits on flexible and transparent plastic substrates was shown. Future scalability of the fabrication process, for example, by using high-throughput printing techniques, opens new routes toward the realization of large-area flexible electronics. en
dc.format.extent 133
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher Aalto University en
dc.publisher Aalto-yliopisto fi
dc.relation.ispartofseries Aalto University publication series DOCTORAL DISSERTATIONS en
dc.relation.ispartofseries 123/2013
dc.relation.haspart [Publication 1]: Zavodchikova, M.Y., Nasibulin, A.G., Kulmala, T., Grigoras, K., Anisimov, A.S., Franssila, S., Ermolov, V., Kauppinen, E.I., 2008. Novel carbon nanotube network deposition technique for electronic device fabrication. Physica Status Solidi (b), 245 (10), 2272-2275, doi: 10.1002/pssb.200879607
dc.relation.haspart [Publication 2]: Zavodchikova, M.Y., Kulmala, T., Nasibulin, A.G., Ermolov, V., Franssila, S., Grigoras, K., Kauppinen, E.I., 2009. Carbon nanotube thin film transistors based on aerosol methods. Nanotechnology, 20, 085201, doi:10.1088/0957-4484/20/8/085201
dc.relation.haspart [Publication 3]: Sun, D., Timmermans, M.Y., Tian, Y., Nasibulin, A.G., Kauppinen, E.I., Kishimoto, S., Mizutani, T., Ohno, Y., 2011. Flexible high-performance carbon nanotube integrated circuits. Nature Nanotechnology, 6, 156161, doi:10.1038/nnano.2011.1
dc.relation.haspart [Publication 4]: Timmermans, M.Y., Grigoras, K., Nasibulin, A.G., Hurskainen, V., Franssila, S., Ermolov, V., Kauppinen, E.I., 2011. Lithography-free fabrication of carbon nanotube network transistors. Nanotechnology, 22, 065303, doi:10.1088/0957-4484/22/6/065303
dc.relation.haspart [Publication 5]: Timmermans, M.Y., Estrada, D., Nasibulin, A.G., Wood, J. D., Behnam, A., Sun, D., Ohno, Y., Lyding, J. W., Hassanien, A., Pop, E., Kauppinen, E.I., 2012. Effect of carbon nanotube network morphology on thin film transistor performance. Nano Research, 5 (5), 307-319, doi: 10.1007/s12274-012-0211-8
dc.subject.other Physics en
dc.title Carbon Nanotube Thin Film Transistors for Flexible Electronics en
dc.type G5 Artikkeliväitöskirja fi
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.contributor.department Department of Applied Physics en
dc.subject.keyword carbon nanotube network en
dc.subject.keyword thin film transistor en
dc.subject.keyword aerosol synthesis en
dc.subject.keyword nanotube deposition en
dc.subject.keyword patterned assembly en
dc.subject.keyword morphology en
dc.subject.keyword flexible integrated circuit en
dc.identifier.urn URN:ISBN:978-952-60-5278-6
dc.type.dcmitype text en
dc.type.ontasot Doctoral dissertation (article-based) en
dc.type.ontasot Väitöskirja (artikkeli) fi
dc.contributor.supervisor Kauppinen, Esko I., Prof., Aalto University, Finland
dc.opn Lee, Young Hee, Prof., Sungkyunkwan University, Korea
dc.date.dateaccepted 2013-06-27
dc.contributor.lab NanoMaterials Research Group en
dc.rev Nihey, Fumiyuki, Dr., National Institute of Advanced Industrial Science and Technology, Japan
dc.rev Kordás, Krisztián, Dr., University of Oulu, Finland
dc.date.defence 2013-09-13

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