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Computational Study of the Anion Antisite Defect and its Metastability in III-V Semiconductors

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.advisor Virkkala, Ville
dc.contributor.author Rasku, Topi
dc.date.accessioned 2013-08-30T06:25:14Z
dc.date.available 2013-08-30T06:25:14Z
dc.date.issued 2013-08-21
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/10935
dc.format.extent 24
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.title Computational Study of the Anion Antisite Defect and its Metastability in III-V Semiconductors en
dc.type G1 Kandidaatintyö fi
dc.contributor.school Perustieteiden korkeakoulu fi
dc.subject.keyword semiconductor en
dc.subject.keyword antisite en
dc.subject.keyword density functional theory en
dc.subject.keyword computational en
dc.identifier.urn URN:NBN:fi:aalto-201309027653
dc.type.dcmitype text en
dc.programme.major Teknillinen fysiikka fi
dc.programme.mcode F3005 fi
dc.type.ontasot Bachelor's thesis en
dc.type.ontasot Kandidaatintyö fi
dc.contributor.supervisor Puska, Martti
dc.programme Teknillinen fysiikka ja matematiikka TFM fi


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