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Effect of crystal structure on the Young's modulus of GaP nanowires

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Alekseev, Prokhor A.
dc.contributor.author Borodin, Bogdan R.
dc.contributor.author Geydt, Pavel
dc.contributor.author Khayrudinov, Vladislav
dc.contributor.author Bespalova, Kristina
dc.contributor.author Kirilenko, Demid A.
dc.contributor.author Reznik, Rodion R.
dc.contributor.author Nashchekin, Alexey
dc.contributor.author Haggren, Tuomas
dc.contributor.author Lahderanta, Erkki
dc.contributor.author Cirlin, George E.
dc.contributor.author Lipsanen, Harri
dc.contributor.author Dunaevskiy, Mikhail S.
dc.date.accessioned 2021-08-04T06:42:21Z
dc.date.available 2021-08-04T06:42:21Z
dc.date.issued 2021-09-17
dc.identifier.citation Alekseev , P A , Borodin , B R , Geydt , P , Khayrudinov , V , Bespalova , K , Kirilenko , D A , Reznik , R R , Nashchekin , A , Haggren , T , Lahderanta , E , Cirlin , G E , Lipsanen , H & Dunaevskiy , M S 2021 , ' Effect of crystal structure on the Young's modulus of GaP nanowires ' , Nanotechnology , vol. 32 , no. 38 , 385706 . https://doi.org/10.1088/1361-6528/ac0ac7 en
dc.identifier.issn 0957-4484
dc.identifier.issn 1361-6528
dc.identifier.other PURE UUID: 7e455665-3bb3-4176-a864-2745b6cddb1e
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/7e455665-3bb3-4176-a864-2745b6cddb1e
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/66113848/accepted_version.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/108905
dc.description.abstract Young's modulus of tapered mixed composition (zinc-blende with a high density of twins and wurtzite with a high density of stacking faults) gallium phosphide (GaP) nanowires (NWs) was investigated by atomic force microscopy. Experimental measurements were performed by obtaining bending profiles of as-grown inclined GaP NWs deformed by applying a constant force to a series of NW surface locations at various distances from the NW/substrate interface. Numerical modeling of experimental data on bending profiles was done by applying Euler-Bernoulli beam theory. Measurements of the nano-local stiffness at different distances from the NW/substrate interface revealed NWs with a non-ideal mechanical fixation at the NW/substrate interface. Analysis of the NWs with ideally fixed base resulted in experimentally measured Young's modulus of 155 +/- 20 GPa for ZB NWs, and 157 +/- 20 GPa for WZ NWs, respectively, which are in consistence with a theoretically predicted bulk value of 167 GPa. Thus, impacts of the crystal structure (WZ/ZB) and crystal defects on Young's modulus of GaP NWs were found to be negligible. en
dc.format.extent 8
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher IOP Publishing Ltd.
dc.relation.ispartofseries Nanotechnology en
dc.relation.ispartofseries Volume 32, issue 38 en
dc.rights openAccess en
dc.title Effect of crystal structure on the Young's modulus of GaP nanowires en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department St. Petersburg Scientific Centre
dc.contributor.department LUT University
dc.contributor.department Harri Lipsanen Group
dc.contributor.department Electronics Integration and Reliability
dc.contributor.department St. Petersburg State University
dc.contributor.department Department of Electronics and Nanoengineering
dc.contributor.department Alferov University
dc.contributor.department Department of Electrical Engineering and Automation en
dc.subject.keyword GaP
dc.subject.keyword nanowire
dc.subject.keyword atomic force microscopy
dc.subject.keyword WZ
dc.subject.keyword ZB
dc.subject.keyword Young's modulus
dc.subject.keyword bending
dc.subject.keyword III-V NANOWIRES
dc.subject.keyword MECHANICAL-PROPERTIES
dc.subject.keyword GAAS NANOWIRES
dc.subject.keyword WURTZITE
dc.subject.keyword RESONANCE
dc.subject.keyword STRESS
dc.subject.keyword CELL
dc.identifier.urn URN:NBN:fi:aalto-202108048149
dc.identifier.doi 10.1088/1361-6528/ac0ac7
dc.date.embargo info:eu-repo/date/embargoEnd/2022-09-22

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