Atomic Layer Epitaxy of III-V Compound Semiconductors in a Hydride Vapor Phase System



Title:	Atomic Layer Epitaxy of III-V Compound Semiconductors in a Hydride Vapor Phase System 3-5 yhdistepuolijohteiden kasvattaminen atomikerrosepitaksialla kaasufaasista
Author(s):	Ahopelto, Jouni
Date:	1991
Language:	en
Pages:	54
Department:	Sähkötekniikan osasto
Major/Subject:	Elektronifysiikka
Supervising professor(s):	Sinkkonen, Juha
Thesis advisor(s):	Suni, Ilkka
Keywords:	atomic layer epitaxy (ALE), gallium arsenide
	OEVS yes
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Permanent link to this item: http://urn.fi/URN:NBN:fi:aalto-202104144702 Email this Export to RefWorks QR Code Print BibTex Tweet