In Situ Positron Annihilation Spectroscopy Analysis on Low-Temperature Irradiated Semiconductors, Challenges and Possibilities

Slotte, Jonatan; Kilpeläinen, Simo; Segercrantz, Natalie; Mizohata, Kenichiro; Räisänen, Jyrki; Tuomisto, Filip

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dc.contributor	Aalto-yliopisto	fi
dc.contributor	Aalto University	en
dc.contributor.author	Slotte, Jonatan
dc.contributor.author	Kilpeläinen, Simo
dc.contributor.author	Segercrantz, Natalie
dc.contributor.author	Mizohata, Kenichiro
dc.contributor.author	Räisänen, Jyrki
dc.contributor.author	Tuomisto, Filip
dc.date.accessioned	2021-03-03T07:36:29Z
dc.date.available	2021-03-03T07:36:29Z
dc.date.issued	2021-01
dc.identifier.citation	Slotte , J , Kilpeläinen , S , Segercrantz , N , Mizohata , K , Räisänen , J & Tuomisto , F 2021 , ' In Situ Positron Annihilation Spectroscopy Analysis on Low-Temperature Irradiated Semiconductors, Challenges and Possibilities ' , Physica Status Solidi (A) Applications and Materials Science , vol. 218 , no. 1 , 2000232 . https://doi.org/10.1002/pssa.202000232	en
dc.identifier.issn	1862-6300
dc.identifier.issn	1862-6319
dc.identifier.other	PURE UUID: 7945676c-ca9c-447c-9a70-688aa81eb334
dc.identifier.other	PURE ITEMURL: https://research.aalto.fi/en/publications/7945676c-ca9c-447c-9a70-688aa81eb334
dc.identifier.other	PURE LINK: http://www.scopus.com/inward/record.url?scp=85088825186&partnerID=8YFLogxK
dc.identifier.other	PURE FILEURL: https://research.aalto.fi/files/56595414/pssa.202000232.pdf
dc.identifier.uri	https://aaltodoc.aalto.fi/handle/123456789/102910
dc.description.abstract	A unique experimental setup at the Accelerator Laboratory of the University of Helsinki enables in situ positron annihilation spectroscopy (PAS) analysis on ion irradiated samples. In addition, the system enables temperature control (10–300 K) of the sample both during irradiation and during subsequent positron annihilation measurements. Using such a system for defect identification and annealing studies comes with a plethora of possibilities for elaborate studies. However, the system also poses some restrictions and challenges to these possibilities, both related to irradiation and to the PAS analysis. This review tries to address these issues.	en
dc.format.extent	6
dc.format.mimetype	application/pdf
dc.language.iso	en	en
dc.publisher	WILEY-V C H VERLAG GMBH
dc.relation.ispartofseries	Physica Status Solidi (A) Applications and Materials Science	en
dc.relation.ispartofseries	Volume 218, issue 1	en
dc.rights	openAccess	en
dc.title	In Situ Positron Annihilation Spectroscopy Analysis on Low-Temperature Irradiated Semiconductors, Challenges and Possibilities	en
dc.type	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä	fi
dc.description.version	Peer reviewed	en
dc.contributor.department	Antimatter and Nuclear Engineering
dc.contributor.department	Department of Applied Physics
dc.contributor.department	University of Helsinki
dc.subject.keyword	defects
dc.subject.keyword	irradiation
dc.subject.keyword	positron annihilation spectroscopy
dc.subject.keyword	vacancies
dc.identifier.urn	URN:NBN:fi:aalto-202103032198
dc.identifier.doi	10.1002/pssa.202000232
dc.type.version	publishedVersion