Study of Cu-Sn-In system for low temperature, wafer level solid liquid inter-diffusion bonding

Hotchkiss, Joseph; Vuorinen, Vesa; Dong, Hongqun; Ross, Glenn; Kaaos, Jani; Paulasto-Krockel, Mervi; Wernicke, Tobias; Ponninger, Anneliese

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Study of Cu-Sn-In system for low temperature, wafer level solid liquid inter-diffusion bonding

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Title:	Study of Cu-Sn-In system for low temperature, wafer level solid liquid inter-diffusion bonding
Author(s):	Hotchkiss, Joseph ; Vuorinen, Vesa ; Dong, Hongqun ; Ross, Glenn ; Kaaos, Jani ; Paulasto-Krockel, Mervi ; Wernicke, Tobias ; Ponninger, Anneliese
Date:	2020-09-15
Language:	en
Pages:	5
Department:	Electronics Integration and Reliability Department of Electrical Engineering and Automation EV Group
ISBN:	9781728162928
Series:	Proceedings - 2020 IEEE 8th Electronics System-Integration Technology Conference, ESTC 2020
DOI-number:	10.1109/ESTC48849.2020.9229696
Keywords:	Copper, Indium, Tin
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Citation: Hotchkiss , J , Vuorinen , V , Dong , H , Ross , G , Kaaos , J , Paulasto-Krockel , M , Wernicke , T & Ponninger , A 2020 , Study of Cu-Sn-In system for low temperature, wafer level solid liquid inter-diffusion bonding . in Proceedings - 2020 IEEE 8th Electronics System-Integration Technology Conference, ESTC 2020 . , 9229696 , IEEE , Electronics System-Integration Technology Conference , Tonsberg, Vestfold , Norway , 15/09/2020 . https://doi.org/10.1109/ESTC48849.2020.9229696
Abstract: The Solid Liquid Interdiffusion (SLID) bonds carried out for this work take advantage of the Cu-In-Sn ternary system to achieve low temperature wafer-level bonds. The experiments were carried out across a range of temperatures and the results cover optimized wafer-level bonding process, the formation of the bond microstructure, mechanical performance, as well as the effects of thermal aging.

Description: \| openaire: EC/H2020/826588/EU//APPLAUSE
Permanent link to this item: http://urn.fi/URN:NBN:fi:aalto-2020123160252 Email this Export to RefWorks QR Code Print BibTex Tweet