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Browsing by Keyword "vacancies"
Now showing items 1-20 of 35
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Title: Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions Author(s): Venkatachalapathy, Vishnukanthan; Galeckas, Augustinas; Zubiaga, Asier; Tuomisto, Filip; Kuznetsov, Andrej Yu. Date: 2010 Series: Journal of Applied Physics, Volume 108, Issue 4 School of Science -
Title: Compensating point defects in 4He+ -irradiated InN Author(s): Tuomisto, Filip; Pelli, A.; Yu, K. M.; Walukiewicz, W.; Schaff, W. J. Date: 2007 Series: Physical Review B, Volume 75, Issue 19 School of Science -
Title: Compensating vacancy defects in Sn- and Mg-doped In 2O3 Author(s): Korhonen, E.; Tuomisto, Filip; Bierwagen, O.; Speck, J. S.; Galazka, Z. Date: 2014 Series: Physical Review B, Volume 90, Issue 24 School of Science -
Title: Defect evolution and interplay in n-type InN Author(s): Rauch, Christian; Tuomisto, Filip; Vilalta-Clemente, Arantxa; Lacroix, Bertrand; Ruterana, Pierre; Kraeusel, Simon; Hourahine, Ben; Schaff, William J. Date: 2012 Series: Applied Physics Letters, Volume 100, Issue 9 School of Science -
Title: Defect redistribution in postirradiation rapid-thermal-annealed InN Author(s): Reurings, Floris; Rauch, Christian; Tuomisto, Filip; Jones, Rebecca E.; Yu, Kin M.; Walukiewicz, Wladek; Schaff, William J. Date: 2010 Series: Physical Review B, Volume 82, Issue 15 School of Science -
Title: Defect studies in n-type indium nitride Author(s): Rauch, Christian Date: 2012 Series: Aalto University publication series DOCTORAL DISSERTATIONS, 52/2012 School of Science | Doctoral thesis (article-based) | Defence date: 2012-05-04 -
Title: Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN Author(s): Tuomisto, Filip; Saarinen, K.; Lucznik, B.; Grzegory, I.; Teisseyre, H.; Suski, T.; Porowski, S.; Hageman, P. R.; Likonen, J. Date: 2005 Series: Applied Physics Letters, Volume 86, Issue 3 School of Science -
Title: Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition Author(s): Tengborn, E.; Rummukainen, M.; Tuomisto, Filip; Saarinen, K.; Rudzinski, M.; Hageman, P. R.; Larsen, P. K.; Nordlund, A. Date: 2006 Series: Applied Physics Letters, Volume 89, Issue 9 School of Science -
Title: Evidence of a second acceptor state of the E center in Si1-x Gex Author(s): Kuitunen, K.; Tuomisto, Filip; Slotte, J. Date: 2007 Series: Physical Review B, Volume 76, Issue 23 School of Science -
Title: First-principles study of fully relaxed vacancies in GaAs Author(s): Laasonen, K.; Nieminen, Risto M.; Puska, Martti J. Date: 1992 Series: Physical Review B, Volume 45, Issue 8 School of Science -
Title: Identification of substitutional Li in n-type ZnO and its role as an acceptor Author(s): Johansen, K. M.; Zubiaga, A.; Makkonen, I.; Tuomisto, Filip; Neuvonen, P. T.; Knutsen, K. E.; Monakhov, E. V.; Kuznetsov, A. Yu.; Svensson, B. G. Date: 2011 Series: Physical Review B, Volume 83, Issue 24 School of Science -
Title: Identification of the VAl-ON defect complex in AlN single crystals Author(s): Mäki, J.-M.; Makkonen, I.; Tuomisto, Filip; Karjalainen, A.; Suihkonen, S.; Räisänen, J.; Chemekova, T. Yu.; Makarov, Yu. N. Date: 2011 Series: Physical Review B, Volume 84, Issue 8 School of Science -
Title: Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: A case study of InN Author(s): Rauch, Christian; Makkonen, Ilja; Tuomisto, Filip Date: 2011 Series: Physical Review B, Volume 84, Issue 12 School of Science -
Title: In Situ Positron Annihilation Spectroscopy Analysis on Low-Temperature Irradiated Semiconductors, Challenges and Possibilities Author(s): Slotte, Jonatan; Kilpeläinen, Simo; Segercrantz, Natalie; Mizohata, Kenichiro; Räisänen, Jyrki; Tuomisto, Filip Date: 2021-01 Series: Physica Status Solidi (A) Applications and Materials Science, Volume 218, issue 1 -
Title: In vacancies in InN grown by plasma-assisted molecular beam epitaxy Author(s): Reurings, Floris; Tuomisto, Filip; Gallinat, Chad S.; Koblmuller, Gregor; Speck, James S. Date: 2010 Series: Applied Physics Letters, Volume 97, Issue 25 School of Science -
Title: Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature Author(s): Koblmuller, G.; Reurings, F.; Tuomisto, Filip; Speck, J. S. Date: 2010 Series: Applied Physics Letters, Volume 97, Issue 19 School of Science -
Title: Influence of silicon doping on vacancies and optical properties of Al(x)Ga(1-x)N thin films Author(s): Slotte, Jonatan; Tuomisto, Filip; Saarinen, K.; Moe, C.G.; Keller, Stacia; DenBaars, S.P. Date: 2007 Series: Applied Physics Letters, Volume 90, issue 15 -
Title: Influence of silicon doping on vacancies and optical properties of AlxGa1-xN thin films Author(s): Slotte, J.; Tuomisto, Filip; Saarinen, K.; Moe, C. G.; Keller, S.; DenBaars, S. P. Date: 2007 Series: Applied Physics Letters, Volume 90, Issue 15 School of Science -
Title: Magnetic properties of vacancies in graphene and single-walled carbon nanotubes Author(s): Ma, Yuchen; Lehtinen, P. O.; Foster, Adam S.; Nieminen, Risto M. Date: 2004 Series: New Journal of Physics, Volume 6 School of Science -
Title: Mass transport in CuInSe2 from first principles Author(s): Oikkonen, L. E.; Ganchenkova, M. G.; Seitsonen, A. P.; Nieminen, Risto M. Date: 2013 Series: Journal of Applied Physics, Volume 113, Issue 13 School of Science
Now showing items 1-20 of 35
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