Browsing by Author "Tuomisto, F."

Title: Acceptors in undoped GaSb; the role of vacancy defects Author(s): Kujala, Jiri; Slotte, J.; Tuomisto, F. Date: 2013 Series: Journal of Physics: Conference Series, Volume 443, issue 1

Title: Annealing effect on donor-acceptor interface and its impact on the performance of organic photovoltaic devices based on PSiF-DBT copolymer and C60 Author(s): Marchiori, C.F.N.; Yamamoto, N.A.D.; Matos, C.F.; Kujala, Jiri; Macedo, A.G.; Tuomisto, F.; Zarbin, A.J.G.; Koehler, M.; Roman, L.S. Date: 2015 Series: Applied Physics Letters, Volume 106, issue 13

Title: Calculation of positron annihilation characteristics of six main defects in 6H -SiC and the possibility to distinguish them experimentally Author(s): Linez, F.; Makkonen, I.; Tuomisto, F. Date: 2016-07-06 Series: PHYSICAL REVIEW B, Volume 94, issue 1

Title: Charge transition level of GePb1 centers at interfaces of SiO2/GexSi1-x/SiO2 heterostructures investigated by positron annihilation spectroscopy Author(s): Madia, O.; Segercrantz, N.; Afanasjev, V.; Stesmans, A.; Souriau, L.; Slotte, J.; Tuomisto, F. Date: 2014-11 Series: PHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS, Volume 251, issue 11

Title: Clustering of vacancy defects in high-purity semi-insulating SiC Author(s): Aavikko, R.; Saarinen, K.; Tuomisto, F.; Magnusson, B.; Son, N.T.; Janzen, E. Date: 2007-02 Series: PHYSICAL REVIEW B, Volume 75, issue 8

Title: Compensating vacancy defects in Sn- and Mg-doped In2O3 Author(s): Korhonen, E.; Tuomisto, F.; Bierwagen, O.; Speck, J.S.; Galazka, Z. Date: 2014-12 Series: PHYSICAL REVIEW B, Volume 90, issue 24

Title: Deactivation of Li by vacancy clusters in ion implanted and flash-annealed ZnO Author(s): Moe Børseth, T.; Tuomisto, F.; Christensen, J.S.; Skorupa, W.; Monakhov, E.V.; Svensson, B.G.; Kuznetsov, A.Yu. Date: 2006-10 Series: PHYSICAL REVIEW B, Volume 74, issue 16

Title: Defect evolution and impurity migration in Na implanted ZnO Author(s): Neuvonen, P.T.; Vines, L.; Venkatachalapathy, V.; Zubiaga, A.; Tuomisto, F.; Hallén, A.; Svensson, B.G.; Kuznetsov, A.Yu Date: 2011-11 Series: PHYSICAL REVIEW B, Volume 84, issue 20

Title: Defect identification in semiconductors with positron annihilation: Experiment and theory Author(s): Tuomisto, F.; Makkonen, I. Date: 2013-11 Series: REVIEWS OF MODERN PHYSICS, Volume 85, issue 4

Title: Direct observation of mono-vacancy and self-interstitial recovery in tungsten Author(s): Heikinheimo, J.; Mizohata, K.; Räisänen, J.; Ahlgren, Tommy; Jalkanen, P.; Lahtinen, A.; Catarino, N.; Alves, E.; Tuomisto, F. Date: 2019-02-01 Series: APL Materials, Volume 7, issue 2

Title: Direct observations of the vacancy and its annealing in germanium Author(s): Slotte, J.; Kilpeläinen, S.; Tuomisto, F.; Räisänen, J.; Nylansted Larsen, A. Date: 2011-06 Series: PHYSICAL REVIEW B, Volume 83, issue 23

Title: Effect of Mn and Mg dopants on vacancy defect formation in ammonothermal GaN Author(s): Heikkinen, T.; Pavlov, J.; Ceponis, T.; Gaubas, E.; Zając, M.; Tuomisto, F. Date: 2020-10-01 Series: Journal of Crystal Growth, Volume 547

Title: Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal organic chemical vapour deposition Author(s): Tengborn, E.; Rummukainen, M.; Tuomisto, F.; Saarinen, K.; Rudzinski, M.; Hageman, P.R.; Larsen, P.K.; Nordlund, A. Date: 2006 Series: Applied Physics Letters, Volume 89, issue 9

Title: Effects of alloy composition and Si-doping on vacancy defect formation in (InxGa1- x)2O3 thin films Author(s): Prozheeva, V.; Hölldobler, R.; Von Wenckstern, H.; Grundmann, M.; Tuomisto, F. Date: 2018-03-28 Series: Journal of Applied Physics, Volume 123, issue 12

Title: Electrical compensation and cation vacancies in Al rich Si-doped AlGaN Author(s): Prozheev, I.; Mehnke, F.; Wernicke, T.; Kneissl, M.; Tuomisto, F. Date: 2020-10-05 Series: Applied Physics Letters, Volume 117, issue 14

Title: Electrical compensation by Ga vacancies in Ga2O3 thin films Author(s): Korhonen, Esa; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M. Date: 2015 Series: Applied Physics Letters, Volume 106, issue 24

Title: Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium Author(s): Kalliovaara, T.; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Milazzo, R.; Impellizzeri, G.; Fortunato, G.; Napolitani, E. Date: 2016-10-31 Series: Applied Physics Letters, Volume 109, issue 18

Title: Evaluation of the concentration of point defects in GaN Author(s): Reshchikov, M. A.; Usikov, A.; Helava, H.; Makarov, Yu N.; Prozheeva, V.; Makkonen, I.; Tuomisto, F.; Leach, J. H.; Udwary, K. Date: 2017-12-01 Series: Scientific Reports, Volume 7, issue 1

Title: Evidence of the Zn vacancy acting as the dominant acceptor in n-type ZnO Author(s): Tuomisto, F.; Ranki, V.; Saarinen, K.; Look, D.C. Date: 2003-11 Series: Physical Review Letters, Volume 91, issue 20

Title: Evolution of E-centers during the annealing of Sb-doped Si0.8Ge0.2 Author(s): Kilpeläinen, S.; Tuomisto, F.; Slotte, J.; Lundsgaard Hansen, J.; Nylandsted Larsen, A. Date: 2011-03 Series: PHYSICAL REVIEW B, Volume 83, issue 9

Browsing by Author "Tuomisto, F."

Browsing by Author "Tuomisto, F."

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