Browsing by Author "Suihkonen, Sami"

Title: 2D electrons and 2D plasmons in AlGaN/GaN nanostructure under highly non-equilibrium conditions Author(s): Loginov, L. A.; Shalygin, V. A.; Moldavskaya, M. D.; Vinnichenko, M. Ya; Firsov, D. A.; Maremyanin, K. V.; Sakharov, A. V.; Zavarin, E. E.; Arteev, D. S.; Lundin, W. V.; Kauppinen, Christoffer; Suihkonen, Sami Date: 2020-03-25 Series: Journal of Physics: Conference Series, Volume 1482, issue 1

Title: AlN metal-semiconductor field-effect transistors using Si-ion implantation Author(s): Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás Date: 2018-04-01 Series: Japanese Journal of Applied Physics, Volume 57, issue 4

Title: Atomic Layer Deposition of PbS Thin Films at Low Temperatures Author(s): Popov, Georgi; Bačić, Goran; Mattinen, Miika; Manner, Toni; Lindström, Hannu; Seppänen, Heli; Suihkonen, Sami; Vehkamäki, Marko; Kemell, Marianna; Jalkanen, Pasi; Mizohata, Kenichiro; Räisänen, Jyrki; Leskelä, Markku; Koivula, Hanna Maarit; Barry, Seán T.; Ritala, Mikko Date: 2020-10-13 Series: Chemistry of Materials, Volume 32, issue 19

Title: Atomic layer etching of gallium nitride (0001) Author(s): Kauppinen, Christoffer; Khan, Sabbir Ahmed; Sundqvist, Jonas; Suyatin, Dmitry B.; Suihkonen, Sami; Kauppinen, Esko I.; Sopanen, Markku Date: 2017-11-01 Series: JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A, Volume 35, issue 6

Title: Defect studies with positrons: what could we learn on III-nitride heterostructures? Author(s): Tuomisto, Filip; Mäki, Jussi-Matti; Svensk, Olli; Törmä, Pekka; Ali, Muhammad; Suihkonen, Sami; Sopanen, Markku Date: 2010 Series: Journal of Physics: Conference Series, Volume 225, issue 1

Title: Diffusion injected multi-quantum well light-emitting diode structure Author(s): Riuttanen, Lauri; Kivisaari, Pyry; Nykänen, Henri; Svensk, Olli; Suihkonen, Sami; Oksanen, Jani; Tulkki, Jukka; Sopanen, Markku Date: 2014 Series: APPLIED PHYSICS LETTERS, Volume 104

Title: Diffusion-Driven Charge Transport in Light Emitting Devices Author(s): Kim, Iurii; Kivisaari, Pyry; Oksanen, Jani; Suihkonen, Sami Date: 2017-12-12 Series: MATERIALS, Volume 10, issue 12

Title: Electrical injection to contactless near-surface InGaN quantum well Author(s): Riuttanen, Lauri; Kivisaari, Pyry; Svensk, Olli; Oksanen, Jani; Suihkonen, Sami Date: 2015-08-03 Series: APPLIED PHYSICS LETTERS, Volume 107, issue 5

Title: Electrical measurement of internal quantum efficiency and extraction efficiency of III-N light-emitting diodes Author(s): Kivisaari, Pyry; Riuttanen, Lauri; Oksanen, Jani; Suihkonen, Sami; Ali, Muhammad; Lipsanen, Harri; Tulkki, Jukka Date: 2012 Series: Applied Physics Letters, Volume 101, Issue 2 School of Electrical Engineering

Title: Electrical measurement of internal quantum efficiency and extraction efficiency of III-N light-emitting diodes Author(s): Kivisaari, Pyry; Riuttanen, Lauri; Oksanen, Jani; Suihkonen, Sami; Ali, Muhammad; Lipsanen, Harri; Tulkki, Jukka Date: 2012 Series: APPLIED PHYSICS LETTERS, Volume 101, issue 2

Title: Elimination of Lateral Resistance and Current Crowding in Large-Area LEDs by Composition Grading and Diffusion-Driven Charge Transport Author(s): Kivisaari, Pyry; Kim, Iurii; Suihkonen, Sami; Oksanen, Jani Date: 2017 Series: Advanced Electronic Materials, Volume 3, Issue 6 School of Science

Title: Elimination of resistive losses in large-area LEDs by new diffusion-driven devices Author(s): Kivisaari, Pyry; Kim, Iurii; Suihkonen, Sami; Oksanen, Jani Date: 2017 Series: Proceedings of SPIE, Volume 10124 School of Science

Title: Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application Author(s): Sarkar, Ritam; Bhunia, S.; Nag, D.; Barik, B. C.; Das Gupta, K.; Saha, D.; Ganguly, S.; Laha, Apurba; Lemettinen, Jori; Kauppinen, Christoffer; Kim, Iurii; Suihkonen, Sami; Gribisch, Philipp; Osten, Hans Jörg Date: 2019-08-05 Series: Applied Physics Letters, Volume 115, issue 6

Title: Fabrication of InGaN quantum wells for LED applications Author(s): Suihkonen, Sami Date: 2008-04-11 Series: TKK dissertations, 113 Faculty of Electronics, Communications and Automation | Doctoral thesis (article-based)

Title: Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals Author(s): Pimputkar, Siddha; Suihkonen, Sami; Imade, M.; Mori, Y.; Speck, James S.; Nakamura, Shuji Date: 2015-12-15 Series: Journal of Crystal Growth, Volume 432

Title: Identifying threading dislocation types in ammonothermally grown bulk α-GaN by confocal Raman 3-D imaging of volumetric stress distribution Author(s): Holmi, Joonas; Bairamov, Bakhysh H.; Suihkonen, Sami; Lipsanen, Harri Date: 2018-07-25 Series: JOURNAL OF CRYSTAL GROWTH, Volume 499

Title: Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing Author(s): Okumura, Hironori; Watanabe, Yasuhiro; Shibata, Tomohiko; Yoshizawa, Kohei; Uedono, Akira; Tokunaga, Hiroki; Koseki, Shuuichi; Arimura, Tadanobu; Suihkonen, Sami; Palacios, Tomás Date: 2022-02 Series: Japanese Journal of Applied Physics, Volume 61, issue 2

Title: In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2 , H2 and vacuum atmospheres Author(s): Broas, Mikael; Lemettinen, Jori; Sajavaara, Timo; Tilli, Markku; Vuorinen, Vesa; Suihkonen, Sami; Paulasto-Kröckel, Mervi Date: 2019-07-31 Series: Thin Solid Films

Title: Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN Author(s): Sintonen, Sakari; Kivisaari, Pyry; Pimputkar, Siddha; Suihkonen, Sami; Schulz, Tobias; Speck, James S.; Nakamura, Shuji Date: 2016-12-15 Series: Journal of Crystal Growth, Volume 456

Title: Infrared absorption of hydrogen-related defects in ammonothermal GaN Author(s): Suihkonen, Sami; Pimputkar, Siddha; Speck, James S.; Nakamura, Shuji Date: 2016-05-16 Series: APPLIED PHYSICS LETTERS, Volume 108, issue 20

Browsing by Author "Suihkonen, Sami"

Browsing by Author "Suihkonen, Sami"

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