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Browsing by Author "Pourtois, Geoffrey"

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Title: A demonstration of donor passivation through direct formation of V-As_i complexes in As-doped Ge_1−xSn_x Author(s): Khanam, Afrina; Vohra, Anurag; Slotte, Jonatan; Makkonen, Ilja; Loo, Roger; Pourtois, Geoffrey Date: 2020-05-21 Series: Journal of Applied Physics, Volume 127, issue 9
Title: Evolution of phosphorus-vacancy clusters in epitaxial germanium Author(s): Vohra, Anurag; Khanam, Afrina; Slotte, Jonatan; Makkonen, Ilja; Pourtois, Geoffrey; Loo, Roger; Vandervorst, Wilfried Date: 2019-01-14 Series: Journal of Applied Physics, Volume 125, issue 2
Title: Heavily phosphorus doped germanium:Strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation Author(s): Vohra, Anurag; Khanam, Afrina; Slotte, Jonatan; Makkonen, Ilja; Pourtois, Geoffrey; Porret, Clement; Loo, Roger; Vandervorst, Wilfried Date: 2019-06-14 Series: Journal of Applied Physics, Volume 125, issue 22
Title: On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si Author(s): Dhayalan, Sathish Kumar; Kujala, Jiri; Slotte, Jonatan; Pourtois, Geoffrey; Simoen, Eddy; Rosseel, Erik; Hikavyy, Andriy; Shimura, Yosuke; Loo, Roger; Vandervorst, Wilfried Date: 2018 Series: ECS Journal of Solid State Science and Technology, Volume 7, issue 5
Title: On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films Author(s): Dhayalan, Sathish Kumar; Kujala, Jiri; Slotte, Jonatan; Pourtois, Geoffrey; Simoen, Eddy; Rosseel, Erik; Hikavyy, Andriy; Shimura, Yosuke; Iacovo, Serena; Stesmans, Andre; Loo, Roger; Vandervorst, Wilfried Date: 2016-02-22 Series: Applied Physics Letters, Volume 108, issue 8
Title: Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx Author(s): Vohra, Anurag; Makkonen, Ilja; Pourtois, Geoffrey; Slotte, Jonatan; Porret, Clement; Rosseel, Erik; Khanam, Afrina; Tirrito, Matteo; Douhard, Bastien; Loo, Roger; Vandervorst, Wilfried Date: 2020-05-07 Series: ECS Journal of Solid State Science and Technology, Volume 9, issue 4