Browsing by Author "Makkonen, Ilja"

Title: Ab initio studies of stepped Pd surfaces with and without S Author(s): Makkonen, Ilja; Salo, Petri; Alatalo, Matti; Rahman, Talat S. Date: 2003 Series: Physical Review B, Volume 67

Title: Amphoteric Be in GaN Author(s): Tuomisto, Filip; Prozheeva, Vera; Makkonen, Ilja; Myers, Thomas H.; Bockowski, Michal; Teisseyre, Henryk Date: 2017-11-09 Series: Physical Review Letters, Volume 119, issue 19

Title: Analysis of electron-positron momentum spectra of metallic alloys as supported by first-principles calculations Author(s): Folegati, P.; Makkonen, Ilja; Ferragut, R.; Puska, M.J. Date: 2007-02-14 Series: PHYSICAL REVIEW B, Volume 75, issue 5

Title: Calculation of valence electron momentum distributions in solids Author(s): Makkonen, Ilja Date: 2004 Helsinki University of Technology | Master's thesis

Title: Defect identification in semiconductors with positron annihilation: Experiment and theory Author(s): Tuomisto, Filip; Makkonen, Ilja Date: 2013 Series: Reviews of Modern Physics, Volume 85, Issue 4 School of Science

Title: A demonstration of donor passivation through direct formation of V-As_i complexes in As-doped Ge_1−xSn_x Author(s): Khanam, Afrina; Vohra, Anurag; Slotte, Jonatan; Makkonen, Ilja; Loo, Roger; Pourtois, Geoffrey Date: 2020-05-21 Series: Journal of Applied Physics, Volume 127, issue 9

Title: Effect of interstitial carbon on the evolution of early-stage irradiation damage in equi-atomic FeMnNiCoCr high-entropy alloys Author(s): Lu, Eryang; Makkonen, Ilja; Mizohata, Kenichiro; Li, Zhiming; Räisänen, Jyrki; Tuomisto, Filip Date: 2020-01-14 Series: Journal of Applied Physics, Volume 127, issue 2

Title: Energetics of positron states trapped at vacancies in solids Author(s): Makkonen, Ilja; Puska, M.J. Date: 2007-08-17 Series: PHYSICAL REVIEW B, Volume 76, issue 5

Title: Evolution of phosphorus-vacancy clusters in epitaxial germanium Author(s): Vohra, Anurag; Khanam, Afrina; Slotte, Jonatan; Makkonen, Ilja; Pourtois, Geoffrey; Loo, Roger; Vandervorst, Wilfried Date: 2019-01-14 Series: Journal of Applied Physics, Volume 125, issue 2

Title: Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy Author(s): Tuomisto, Filip; Karjalainen, Antti; Prozheeva, Vera; Makkonen, Ilja; Wagner, Gunter; Baldini, Michele Date: 2019-01-01 Series: Oxide-Based Materials and Devices X, Proceedings of SPIE, Volume 10919

Title: Heavily phosphorus doped germanium:Strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation Author(s): Vohra, Anurag; Khanam, Afrina; Slotte, Jonatan; Makkonen, Ilja; Pourtois, Geoffrey; Porret, Clement; Loo, Roger; Vandervorst, Wilfried Date: 2019-06-14 Series: Journal of Applied Physics, Volume 125, issue 22

Title: Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2 Author(s): Makkonen, Ilja; Korhonen, Esa; Prozheeva, Vera; Tuomisto, Filip Date: 2016-03-08 Series: JOURNAL OF PHYSICS: CONDENSED MATTER, Volume 28, issue 22

Title: Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: A case study of InN Author(s): Rauch, Christian; Makkonen, Ilja; Tuomisto, Filip Date: 2011 Series: Physical Review B, Volume 84, Issue 12 School of Science

Title: Interfacial N Vacancies in GaN/(Al,Ga)N/GaN Heterostructures Author(s): Prozheeva, Vera; Makkonen, Ilja; Li, Haoran; Keller, Stacia; Mishra, Umesh K.; Tuomisto, Filip Date: 2020-04 Series: Physical Review Applied, Volume 13, issue 4

Title: Modeling momentum distributions of positron annihilation radiation in solids Author(s): Makkonen, Ilja Date: 2007-09-21 Series: Dissertations of Laboratory of Physics, Helsinki University of Technology, 150 | Doctoral thesis (article-based)

Title: Positron surface state as a spectroscopic probe for characterizing surfaces of topological insulator materials Author(s): Callewaert, Vincent; Shastry, K.; Saniz, Rolando; Makkonen, Ilja; Barbiellini, Bernardo; Assaf, Badih A.; Heiman, Donald; Moodera, Jagadeesh S.; Partoens, Bart; Bansil, Arun; Weiss, A. H. Date: 2016-09-06 Series: Physical Review B, Volume 94, issue 11

Title: Preface to Special Topic Author(s): Tuomisto, Filip; Makkonen, Ilja Date: 2016-05-14 Series: Journal of Applied Physics, Volume 119, issue 18

Title: Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx Author(s): Vohra, Anurag; Makkonen, Ilja; Pourtois, Geoffrey; Slotte, Jonatan; Porret, Clement; Rosseel, Erik; Khanam, Afrina; Tirrito, Matteo; Douhard, Bastien; Loo, Roger; Vandervorst, Wilfried Date: 2020-05-07 Series: ECS Journal of Solid State Science and Technology, Volume 9, issue 4

Title: Split Ga vacancies Author(s): Tuomisto, Filip; Karjalainen, Antti; Makkonen, Ilja Date: 2021 Series: Oxide-Based Materials and Devices XII, Proceedings of SPIE - The International Society for Optical Engineering, Volume 11687

Title: Split Ga vacancies and the unusually strong anisotropy of positron annihilation spectra in β-Ga2 O3 Author(s): Karjalainen, Antti; Prozheeva, Vera; Simula, Kristoffer; Makkonen, Ilja; Callewaert, Vincent; Varley, Joel B.; Tuomisto, Filip Date: 2020-11-30 Series: Physical Review B, Volume 102, issue 19

Browsing by Author "Makkonen, Ilja"

Browsing by Author "Makkonen, Ilja"

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