Browsing by Author "Makkonen, I."

Title: Analysis of electron-positron momentum spectra of metallic alloys as supported by first-principles calculations Author(s): Folegati, P.; Makkonen, I.; Ferragut, R.; Puska, Martti J. Date: 2007 Series: Physical Review B, Volume 75, Issue 5 School of Science

Title: Calculation of positron annihilation characteristics of six main defects in 6H -SiC and the possibility to distinguish them experimentally Author(s): Linez, F.; Makkonen, I.; Tuomisto, F. Date: 2016-07-06 Series: PHYSICAL REVIEW B, Volume 94, issue 1

Title: Calculation of valence electron momentum densities using the projector augmented-wave method Author(s): Makkonen, I.; Hakala, M.; Puska, M.J. Date: 2005-06 Series: Journal of Physics and Chemistry of Solids, Volume 66, issue 6

Title: Defect identification in semiconductors with positron annihilation: Experiment and theory Author(s): Tuomisto, F.; Makkonen, I. Date: 2013-11 Series: REVIEWS OF MODERN PHYSICS, Volume 85, issue 4

Title: Direct evidence of impurity decoration of Ga vacancies in GaN from positron annihilation spectroscopy Author(s): Hautakangas, S.; Ranki, V.; Makkonen, I.; Puska, M.J.; Saarinen, K.; Xu, X.; Look, D.C. Date: 2006 Series: Physical Review B, Volume 73

Title: Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium Author(s): Kalliovaara, T.; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Milazzo, R.; Impellizzeri, G.; Fortunato, G.; Napolitani, E. Date: 2016-10-31 Series: Applied Physics Letters, Volume 109, issue 18

Title: Energetics of positron states trapped at vacancies in solids Author(s): Makkonen, I.; Puska, Martti J. Date: 2007 Series: Physical Review B, Volume 76, Issue 5 School of Science

Title: Enhancement models of momentum densities of annihilating electron-positron pairs: The many-body picture of natural geminals Author(s): Makkonen, I.; Ervasti, M.M.; Siro, T.; Harju, A. Date: 2014 Series: PHYSICAL REVIEW B, Volume 89

Title: Evaluation of the concentration of point defects in GaN Author(s): Reshchikov, M. A.; Usikov, A.; Helava, H.; Makarov, Yu N.; Prozheeva, V.; Makkonen, I.; Tuomisto, F.; Leach, J. H.; Udwary, K. Date: 2017-12-01 Series: Scientific Reports, Volume 7, issue 1

Title: Exchange-correlation potentials for inhomogeneous electron systems in two dimensions from exact diagonalization: Comparison with the local-spin-density approximation Author(s): Makkonen, I.; Ervasti, M.M.; Kauppila, V.J.; Harju, A. Date: 2012 Series: PHYSICAL REVIEW B, Volume 85

Title: Hole density and acceptor-type defects in MBE-grown GaSb1-x Bix Author(s): Segercrantz, N.; Slotte, J.; Makkonen, I.; Tuomisto, F.; Sandall, I. C.; Ashwin, M.J.; Veal, T.D. Date: 2017-07-03 Series: Journal of Physics D: Applied Physics, Volume 50, issue 29

Title: Identification of substitutional Li in n-type ZnO and its role as an acceptor Author(s): Johansen, K. M.; Zubiaga, A.; Makkonen, I.; Tuomisto, Filip; Neuvonen, P. T.; Knutsen, K. E.; Monakhov, E. V.; Kuznetsov, A. Yu.; Svensson, B. G. Date: 2011 Series: Physical Review B, Volume 83, Issue 24 School of Science

Title: Identification of substitutional Li in n-type ZnO and its role as an acceptor Author(s): Johansen, K.M.; Zubiaga, A.; Makkonen, I.; Tuomisto, F.; Neuvonen, P.T.; Knutsen, K.E.; Monakhov, E.V.; Kuznetsov, A.Y.; Svensson, B.G. Date: 2011-06 Series: PHYSICAL REVIEW B, Volume 83, issue 24

Title: Identification of the VAl-ON defect complex in AlN single crystals Author(s): Mäki, J.-M.; Makkonen, I.; Tuomisto, Filip; Karjalainen, A.; Suihkonen, S.; Räisänen, J.; Chemekova, T. Yu.; Makarov, Yu. N. Date: 2011 Series: Physical Review B, Volume 84, Issue 8 School of Science

Title: Identification of the VAl-ON defect complex in AlN single crystals Author(s): Mäki, J.-M.; Makkonen, I.; Tuomisto, F.; Karjalainen, A.; Suihkonen, S.; Räisänen, J.; Chemekova, T.Yu.; Makarov, Yu.N. Date: 2011-08-29 Series: PHYSICAL REVIEW B, Volume 84, issue 8

Title: Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: a case study of InN Author(s): Rauch, C.; Makkonen, I.; Tuomisto, F. Date: 2011-09 Series: PHYSICAL REVIEW B, Volume 84, issue 12

Title: Increased p-type conductivity in GaNxSb1-x, experimental and theoretical aspects Author(s): Segercrantz, N.; Makkonen, I.; Slotte, J.; Kujala, J.; Veal, T. D.; Ashwin, M. J.; Tuomisto, F. Date: 2015-08-28 Series: JOURNAL OF APPLIED PHYSICS, Volume 118, issue 8

Title: Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type β-Ga2O3 Author(s): Karjalainen, A.; Weiser, P. M.; Makkonen, I.; Reinertsen, V. M.; Vines, L.; Tuomisto, F. Date: 2021-04-28 Series: Journal of Applied Physics, Volume 129, issue 16

Title: Large two-dimensional electronic systems: Self-consistent energies and densities at low cost Author(s): Räsänen, E.; Pittalis, S.; Bekcioglu, G.; Makkonen, I. Date: 2013 Series: PHYSICAL REVIEW B, Volume 87

Title: Modeling positronium beyond the single particle approximation Author(s): Zubiaga, A.; Ervasti, M. M.; Makkonen, I.; Harju, A.; Tuomisto, F.; Puska, M. J. Date: 2016-02-29 Series: JOURNAL OF PHYSICS B: ATOMIC MOLECULAR AND OPTICAL PHYSICS, Volume 49, issue 6

Browsing by Author "Makkonen, I."

Browsing by Author "Makkonen, I."

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