(2003) Tuomisto, Filip; Ranki, V.; Saarinen, K.; Look, D C.
School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
We have used positron annihilation spectroscopy to determine the nature and the concentrations of the open volume defects in as-grown and electron irradiated (Eel=2 MeV, fluence 6×10 exp 17 cm exp −2) ZnO samples. The Zn vacancies are identified at concentrations of [VZn]≃2×10 exp 15 cm exp −3 in the as-grown material and [VZn]≃2×10 exp 16 cm exp −3 in the irradiated ZnO. These concentrations are in very good agreement with the total acceptor density determined by temperature dependent Hall experiments. Thus, the Zn vacancies are dominant acceptors in both as-grown and irradiated ZnO.
