Browsing by Author "Zhou, Binbin"

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  • Case studies of electrical characterisation of graphene by terahertz time-domain spectroscopy
    (2021-02-17) Whelan, Patrick R.; Zhou, Binbin; Bezencenet, Odile; Shivayogimath, Abhay; Mishra, Neeraj; Shen, Qian; Jessen, Bjarke S.; Pasternak, Iwona; Mackenzie, David M.A.; Ji, Jie; Sun, Cunzhi; Seneor, Pierre; Dlubak, Bruno; Luo, Birong; Østerberg, Frederik W.; Huang, Deping; Shi, Haofei; Luo, Da; Wang, Meihui; Ruoff, Rodney S.; Conran, Ben R.; McAleese, Clifford; Huyghebaert, Cedric; Brems, Steven; Booth, Timothy J.; Napal, Ilargi; Strupinski, Wlodek; Petersen, Dirch H.; Forti, Stiven; Coletti, Camilla; Jouvray, Alexandre; Teo, Kenneth B.K.; Centeno, Alba; Zurutuza, Amaia; Legagneux, Pierre; Jepsen, Peter U.; Bøggild, Peter
     A2 Katsausartikkeli tieteellisessä aikakauslehdessä
    Graphene metrology needs to keep up with the fast pace of developments in graphene growth and transfer. Terahertz time-domain spectroscopy (THz-TDS) is a non-contact, fast, and non-destructive characterization technique for mapping the electrical properties of graphene. Here we show several case studies of graphene characterization on a range of different substrates that highlight the versatility of THz-TDS measurements and its relevance for process optimization in graphene production scenarios.
  • Fermi velocity renormalization in graphene probed by terahertz time-domain spectroscopy
    (2020-07) Whelan, Patrick R.; Shen, Qian; Zhou, Binbin; Serrano, I. G.; Kamalakar, M. Venkata; MacKenzie, David M.A.; Ji, Jie; Huang, Deping; Shi, Haofei; Luo, Da; Wang, Meihui; Ruoff, Rodney S.; Jauho, Antti Pekka; Jepsen, Peter U.; Bøggild, Peter; Caridad, José M.
     A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
    We demonstrate terahertz time-domain spectroscopy (THz-TDS) to be an accurate, rapid and scalable method to probe the interaction-induced Fermi velocity renormalization ν∗F of charge carriers in graphene. This allows the quantitative extraction of all electrical parameters (DC conductivity σ DC, carrier density n, and carrier mobility µ) of large-scale graphene films placed on arbitrary substrates via THz-TDS. Particularly relevant are substrates with low relative permittivity (< 5) such as polymeric films, where notable renormalization effects are observed even at relatively large carrier densities (>1012 cm-2, Fermi level > 0.1 eV). From an application point of view, the ability to rapidly and non-destructively quantify and map the electrical (σ DC, n, µ) and electronic (ν∗F) properties of large-scale graphene on generic substrates is key to utilize this material in applications such as metrology, flexible electronics as well as to monitor graphene transfers using polymers as handling layers.