Browsing by Author "Uppstu, A."

Now showing 1 - 7 of 7
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    Ab-initio transport fingerprints for resonant scattering in graphene
    (2012-12-12) Saloriutta, K.; Uppstu, A.; Harju, A.; Puska, M.J.; Department of Applied Physics
    We have recently shown that by using a scaling approach for randomly distributed topological defects in graphene, reliable estimates for transmission properties of macroscopic samples can be calculated based even on single-defect calculations [A. Uppstu et al., Phys. Rev. B 85, 041401 (2012)]. We now extend this approach of energy-dependent scattering cross sections to the case of adsorbates on graphene by studying hydrogen and carbon adatoms as well as epoxide and hydroxyl groups. We show that a qualitative understanding of resonant scattering can be gained through density functional theory results for a single-defect system, providing a transmission “fingerprint” characterizing each adsorbate type. This information can be used to reliably predict the elastic mean free path for moderate defect densities directly using ab initio methods. We present tight-binding parameters for carbon and epoxide adsorbates, obtained to match the density-functional theory based scattering cross sections.
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    Anderson localization in two-dimensional graphene with short-range disorder: One-parameter scaling and finite-size effects
    (2014) Fan, Z.; Uppstu, A.; Harju, A.; Department of Applied Physics
    We study Anderson localization in graphene with short-range disorder using the real-space Kubo-Greenwood method implemented on graphics processing units. Two models of short-range disorder, namely, the Anderson on-site disorder model and the vacancy defect model, are considered. For graphene with Anderson disorder, localization lengths of quasi-one-dimensional systems with various disorder strengths, edge symmetries, and boundary conditions are calculated using the real-space Kubo-Greenwood formalism, showing excellent agreement with independent transfer matrix calculations and superior computational efficiency. Using these data, we demonstrate the applicability of the one-parameter scaling theory of localization length and propose an analytical expression for the scaling function, which provides a reliable method of computing the two-dimensional localization length. This method is found to be consistent with another widely used method which relates the two-dimensional localization length to the elastic mean free path and the semiclassical conductivity. Abnormal behavior at the charge neutrality point is identified and interpreted to be caused by finite-size effects when the system width is comparable to or smaller than the elastic mean free path. We also demonstrate the finite-size effect when calculating the two-dimensional conductivity in the localized regime and show that a renormalization group β function consistent with the one-parameter scaling theory can be extracted numerically. For graphene with vacancy disorder, we show that the proposed scaling function of localization length also applies. Last, we discuss some ambiguities in calculating the semiclassical conductivity around the charge neutrality point due to the presence of resonant states.
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    Electronic and transport properties in geometrically disordered graphene antidot lattices
    (2015) Fan, Z.; Uppstu, A.; Harju, Ari; Department of Applied Physics; Quantum Many-Body Physics
    A graphene antidot lattice, created by a regular perforation of a graphene sheet, can exhibit a considerable band gap required by many electronics devices. However, deviations from perfect periodicity are always present in real experimental setups and can destroy the band gap. Our numerical simulations, using an efficient linear-scaling quantum transport simulation method implemented on graphics processing units, show that disorder that destroys the band gap can give rise to a transport gap caused by Anderson localization. The size of the defect-induced transport gap is found to be proportional to the radius of the antidots and inversely proportional to the square of the lattice periodicity. Furthermore, randomness in the positions of the antidots is found to be more detrimental than randomness in the antidot radius. The charge carrier mobilities are found to be very small compared to values found in pristine graphene, in accordance with recent experiments.
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    Electronic transport in graphene-based structures: An effective cross section approach
    (2012-01-03) Uppstu, A.; Saloriutta, K.; Harju, A.; Puska, M.; Jauho, A.-P.; Department of Applied Physics
    We show that transport in low-dimensional carbon structures with finite concentrations of scatterers can be modeled by utilizing scaling theory and effective cross sections. Our results are based on large-scale numerical simulations of carbon nanotubes and graphene nanoribbons, using a tight-binding model with parameters obtained from first-principles electronic structure calculations. As shown by a comprehensive statistical analysis, the scattering cross sections can be used to estimate the conductance of a quasi-one-dimensional system both in the Ohmic and localized regimes. They can be computed with good accuracy from the transmission functions of single defects, greatly reducing the computational cost and paving the way toward using first-principles methods to evaluate the conductance of mesoscopic systems, consisting of millions of atoms.
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    Generalized tight-binding transport model for graphene nanoribbon-based systems
    (American Physical Society (APS), 2010) Hancock, Y.; Uppstu, A.; Saloriutta, K.; Harju, A.; Puska, Martti J.; Teknillisen fysiikan laitos; Department of Applied Physics; Perustieteiden korkeakoulu; School of Science
    An extended tight-binding model that includes up to third-nearest-neighbor hopping and a Hubbard mean-field interaction term is tested against ab initio local spin-density approximation results of band structures for armchair- and zigzag-edged graphene nanoribbons. A single tight-binding parameter set is found to accurately reproduce the ab initio results for both the armchair and zigzag cases. Transport calculations based on the extended tight-binding model faithfully reproduce the results of ab initio transport calculations of graphene nanoribbon-based systems.
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    Generalized tight-binding transport model for graphene nanoribbon-based systems
    (2010-06-01) Hancock, Y.; Uppstu, A.; Saloriutta, K.; Harju, A.; Puska, M.J.; Department of Applied Physics; Electronic Properties of Materials
    An extended tight-binding model that includes up to third-nearest-neighbor hopping and a Hubbard mean-field interaction term is tested against ab initio local spin-density approximation results of band structures for armchair- and zigzag-edged graphene nanoribbons. A single tight-binding parameter set is found to accurately reproduce the ab initio results for both the armchair and zigzag cases. Transport calculations based on the extended tight-binding model faithfully reproduce the results of ab initio transport calculations of graphene nanoribbon-based systems.
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    Obtaining localization properties efficiently using the Kubo-Greenwood formalism
    (2014) Uppstu, A.; Fan, Z.; Harju, A.; Department of Applied Physics
    We establish, through numerical calculations and comparisons with a recursive Green's-function based implementation of the Landauer-Büttiker formalism, an efficient method for studying Anderson localization in quasi-one-dimensional and two-dimensional systems using the Kubo-Greenwood formalism. Although the recursive Green's-function method can be used to obtain the localization length of a mesoscopic conductor, it is numerically very expensive for systems that contain a large number of atoms transverse to the transport direction. On the other hand, linear scaling has been achieved with the Kubo-Greenwood method, enabling the study of effectively two-dimensional systems. While the propagating length of the charge carriers will eventually saturate to a finite value in the localized regime, the conductances given by the Kubo-Greenwood method and the recursive Green's-function method agree before the saturation. The converged value of the propagating length is found to be directly proportional to the localization length obtained from the exponential decay of the conductance.