Browsing by Author "Pohjola, P."
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Item Tensile-strained GaAsN quantum dots on InP(AIP Publishing, 2007) Pohjola, P.; Hakkarainen, T.; Koskenvaara, H.; Sopanen, Markku; Lipsanen, Harri; Sainio, J.; Department of Micro and Nanosciences; Mikro- ja nanotekniikan laitos; Sähkötekniikan korkeakoulu; School of Electrical EngineeringSelf-assembled quantum dots are typically fabricated from compressive-strained material systems, e.g., InAs on GaAs. In this letter, self-assembled quantum dots from tensile-strained GaAsN on InP are demonstrated. GaAsN on InP has type-I band alignment. Stranski-Krastanov growth mode is not observed, but in situannealing of the uncapped samples results in the formation of islands. Photoluminescence spectra from the buried GaAsN show separate peaks due to a wetting layer and islands around the energies of 1.3 and 1.1eV, respectively.