Browsing by Author "Lindberg, M."

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    Temperature dependence of carrier relaxation in strain-induced quantum dots
    (1998-12-15) Brasken, M.; Lindberg, M.; Sopanen, M.; Lipsanen, H.; Tulkki, J.; Department of Micro and Nanosciences; Department of Neuroscience and Biomedical Engineering
    We report experimental observation and theoretical interpretation of temperature-dependent, time-resolved luminescence from strain-induced quantum dots. The experimental results are well described by a master equation model for the electrons. The intraband relaxation in the conduction band and the radiative recombination rate are governed by the hole populations resulting in prominent temperature dependence of the relaxation process. Even when only a few electrons and holes are confined in a single quantum dot the Auger-like process provides a rapid intraband relaxation channel for electrons that can replace the phonon scattering as the dominant relaxation mechanism.
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    Temperature dependence of carrier relaxation in strain-induced quantum dots
    (American Physical Society (APS), 1998) Braskén, M.; Lindberg, M.; Sopanen, Markku; Lipsanen, Harri; Tulkki, J.; Department of Micro and Nanosciences; Mikro- ja nanotekniikan laitos; Sähkötekniikan korkeakoulu; School of Electrical Engineering
    We report experimental observation and theoretical interpretation of temperature-dependent, time-resolved luminescence from strain-induced quantum dots. The experimental results are well described by a master equation model for the electrons. The intraband relaxation in the conduction band and the radiative recombination rate are governed by the hole populations resulting in prominent temperature dependence of the relaxation process. Even when only a few electrons and holes are confined in a single quantum dot the Auger-like process provides a rapid intraband relaxation channel for electrons that can replace the phonon scattering as the dominant relaxation mechanism.