Browsing by Author "Dadgar, A."
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- Radiation-induced alloy rearrangement in InxGa1− xN
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä(2017-03-27) Prozheeva, V.; Makkonen, I.; Cuscó, R.; Artús, L.; Dadgar, A.; Plazaola, F.; Tuomisto, F.The effect of radiation damage on the defect and alloy structure in InxGa1− xN thin films grown on Si substrates was studied using positron annihilation spectroscopy. Prior to the measurements, the samples were subjected to double He+ implantation at 40 and 100 keV. The results show the presence of cation vacancy-like defects in high concentrations (>1018 cm−3) already in the as-grown samples. The evolution of the annihilation characteristics after the implantation suggests strong alloy disorder rearrangement under irradiation.