Browsing by Author "Alekseev, Prokhor A."

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    Effect of crystal structure on the Young's modulus of GaP nanowires
    (IOP Publishing Ltd., 2021-09-17) Alekseev, Prokhor A.; Borodin, Bogdan R.; Geydt, Pavel; Khayrudinov, Vladislav; Bespalova, Kristina; Kirilenko, Demid A.; Reznik, Rodion R.; Nashchekin, Alexey; Haggren, Tuomas; Lahderanta, Erkki; Cirlin, George E.; Lipsanen, Harri; Dunaevskiy, Mikhail S.; Department of Electronics and Nanoengineering; Department of Electrical Engineering and Automation; Harri Lipsanen Group; Electronics Integration and Reliability; St. Petersburg Scientific Centre; LUT University; St. Petersburg State University; Alferov University
    Young's modulus of tapered mixed composition (zinc-blende with a high density of twins and wurtzite with a high density of stacking faults) gallium phosphide (GaP) nanowires (NWs) was investigated by atomic force microscopy. Experimental measurements were performed by obtaining bending profiles of as-grown inclined GaP NWs deformed by applying a constant force to a series of NW surface locations at various distances from the NW/substrate interface. Numerical modeling of experimental data on bending profiles was done by applying Euler-Bernoulli beam theory. Measurements of the nano-local stiffness at different distances from the NW/substrate interface revealed NWs with a non-ideal mechanical fixation at the NW/substrate interface. Analysis of the NWs with ideally fixed base resulted in experimentally measured Young's modulus of 155 +/- 20 GPa for ZB NWs, and 157 +/- 20 GPa for WZ NWs, respectively, which are in consistence with a theoretically predicted bulk value of 167 GPa. Thus, impacts of the crystal structure (WZ/ZB) and crystal defects on Young's modulus of GaP NWs were found to be negligible.